Temperature self-adaptive adjustment power tube

A self-adaptive adjustment, power tube technology, applied in the direction of temperature control using electric mode, can solve the problem that the power tube does not have a temperature protection circuit, and achieve the effect of avoiding shutdown loss

Active Publication Date: 2015-03-11
四川广义微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the technical defects that the power tube in the prior art does not have a special temperature protection circuit, or the existing temperature protection circu

Method used

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  • Temperature self-adaptive adjustment power tube
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  • Temperature self-adaptive adjustment power tube

Examples

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Example Embodiment

[0022] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0023] The temperature adaptive adjustment power tube of the present invention includes a signal input end, a power tube and its grid, and is characterized in that it also includes a grid control circuit, and the grid control circuit is composed of a pull-down resistor R1, a step-down resistor R2, The temperature sensing device is composed of a first signal input tube M1 and a second signal input tube M2;

[0024] The first signal input tube is connected between the power supply and the pull-down resistor, the pull-down resistor is grounded, the common terminal of the pull-down resistor and the first signal input tube is connected to the gate of the power tube, and the signal input end is connected to the control end of the second signal input tube , the step-down resistor and the temperature sensing device are connected in series be...

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Abstract

Provided is a temperature self-adaptive adjustment power tube which comprises a signal input end, a power tube and a gate electrode thereof. The temperature self-adaptive adjustment power tube is characterized by further comprising a gate electrode control circuit which is composed of a pull-down resistor, a voltage dropping resistor, a temperature induction device, a first signal input tube and a second signal input tube. The first signal input tube is connected between a power supply and the pull-down resistor which is grounded. The common end of the pull-down resistor and the first signal input tube is connected with the gate electrode of the power tube. The signal input end is connected with the control end of the second signal input tube. The voltage dropping resistor and the temperature induction device are connected in series between the drain electrode of the second signal input tube and the ground. The second signal input tube is a PMOS, the source electrode of the second signal input tube is connected with the power supply and the drain electrode is connected with the control end of the first signal input tube. Output voltage of the temperature induction device is a negative temperature coefficient. Adjustment of the heat value of the power tube can be realized only via additional arrangement of a small amount of devices so that the power tube is enabled to work continuously and uninterruptedly and unnecessary shutdown loss can be avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, relates to the design and manufacture of a power tube, in particular to a temperature self-adaptive adjustment power tube. Background technique [0002] A semiconductor power device is a single device with the ability to output high power, which is manufactured by using semiconductor materials and semiconductor manufacturing processes. It is widely used in amplifiers, switching power supplies or drive circuits. In the existing application circuit solutions, multiple power The device can be used as amplifying signal, power switch and output stage, etc. respectively. [0003] With the advancement of semiconductor technology, the minimum line width has already broken through the micrometer level and reached the nanometer level. Due to the continuous reduction of line width, the power density of semiconductor chips, especially power devices, has been continuously improved. A single semicond...

Claims

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Application Information

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IPC IPC(8): G05D23/19
Inventor 王建全崔永明王作义彭彪李保霞张干
Owner 四川广义微电子股份有限公司
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