IGBT overvoltage protection circuit and IGBT overvoltage protection method

An overvoltage protection circuit and overvoltage signal technology, which is applied in the field of IGBT overvoltage protection and IGBT overvoltage protection circuit, can solve problems such as IGBT breakdown failure, achieve the effect of small current demand, protect IGBT, and shorten response time

Active Publication Date: 2015-05-27
深圳青铜剑技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the IGBT itself is a voltage-sensitive device, once the voltage exc

Method used

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  • IGBT overvoltage protection circuit and IGBT overvoltage protection method
  • IGBT overvoltage protection circuit and IGBT overvoltage protection method
  • IGBT overvoltage protection circuit and IGBT overvoltage protection method

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Example Embodiment

[0026] The present invention will be further described below with reference to the accompanying drawings and in conjunction with the preferred embodiments.

[0027] like figure 1 As shown, the IBGT overvoltage protection circuit of the preferred embodiment of the present invention includes an IGBT, a driving power supply VISO, a collector overvoltage protection circuit 1, a gate overvoltage protection circuit 2 and a drive control circuit 3; wherein the collector overvoltage protection circuit 1 It is used to monitor the voltage of the collector of the IGBT. Once it is detected that the voltage of the collector exceeds a predetermined value, the collector overvoltage protection circuit 1 will transmit the overvoltage signal to the drive control circuit 3, so that the drive control circuit 3 stops the IGBT. During the turn-off process, the current will also be transmitted to the gate of the IGBT, so that the potential of the gate of the IGBT rises, thereby suppressing the rise ...

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Abstract

The invention discloses an IGBT overvoltage protection circuit and an IGBT overvoltage protection method. The IGBT overvoltage protection circuit comprises an IGBT, a driving source, a collector electrode overvoltage protection circuit and a driving control circuit, wherein the driving source is connected with the gate electrode of the IGBT; the collector electrode overvoltage protection circuit is used for monitoring the voltage of the collector electrode of the IGBT, transmitting overvoltage signals to the driving control circuit when the voltage of the collector electrode of the IGBT exceeds a predefined value, and transmitting current to ensure that the potential of the gate electrode of the IGBT is increased to restrain the rising of the voltage of the collector electrode of the IGBT; the driving control circuit stops the turn-off of the IGBT when receiving the overvoltage signals. As the IGBT overvoltage protection circuit controls the turn-off of the IGBT through the driving control circuit while performing overvoltage protection, so that the requirement on charge current of the gate electrode of the IGBT is small, the response time of overvoltage protection is greatly shortened, and the IGBT can be protected more timely.

Description

technical field [0001] The invention relates to the technical field of IGBTs, in particular to an IGBT overvoltage protection circuit and an IGBT overvoltage protection method. Background technique [0002] IGBTs are widely used in new power electronic conversion fields, and popular industries such as photovoltaics, wind power generation, frequency conversion, and electric vehicles can see IGBTs play a very important role in them. During the working process, the IGBT is constantly switched on and off. The failure of the IGBT is mainly caused by overcurrent and overvoltage; the overcurrent of the IGBT will cause the internal temperature of the IGBT chip to rise. When the temperature exceeds the internal junction temperature of the chip If the tolerance range is exceeded, the PN junction breakdown will occur, resulting in the failure of the IGBT. In actual use at present, since there are overcurrent and short-circuit protection circuits for IGBT devices, under normal circumst...

Claims

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Application Information

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IPC IPC(8): H02H7/20
Inventor 黄辉李燕飞汪之涵
Owner 深圳青铜剑技术有限公司
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