Fluid restriction mechanism for immersion lithography machine

An immersion lithography and fluid confinement technology, applied in the field of lithography, can solve problems such as affecting the exposure quality of immersion lithography machines

Inactive Publication Date: 2015-07-22
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The invention provides a fluid limiting mechanism for an immersion photolithography machine to solve the problem that the direct contact between the free liquid surface and the outside air affects the exposure quality of the immersion photolithography machine

Method used

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  • Fluid restriction mechanism for immersion lithography machine
  • Fluid restriction mechanism for immersion lithography machine
  • Fluid restriction mechanism for immersion lithography machine

Examples

Experimental program
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Effect test

Embodiment 1

[0043] Such as Figure 3 to Figure 5 As shown, the embodiment of the present invention provides a fluid confinement mechanism for an immersion lithography machine, and the immersion lithography machine includes an illumination system 2, a mask plate 3, a projection objective lens 4, a fluid confinement mechanism and a silicon wafer 7 , the fluid confinement mechanism is arranged between the projection objective lens 4 and the silicon wafer 7, and the pattern of the integrated circuit on the mask plate 3 passes through the illumination system 2, the projection objective lens 4 and the immersion liquid 5 in the fluid confinement mechanism , transferred to the silicon wafer 7 in the manner of imaging exposure, thereby completing the exposure.

[0044] Wherein, the fluid limiting mechanism is used to form the immersion exposure working environment of the photolithography machine workpiece table, which includes an immersion liquid sealing device, which is used to block the influenc...

Embodiment 2

[0067] Compared with the technical solution in Embodiment 1, this embodiment differs in that the positions of the first opening and the second opening in the fluid confinement mechanism are different, and the rest of the structure is the same as the corresponding structure of Embodiment 1. This will not repeat them.

[0068] Such as Figure 6 and Figure 7 As shown, in this embodiment, the upper surface of the fluid restricting mechanism is a plane 62, and the inner surface thereof is a slope 61, and the first opening 650 and the second opening 660 are both arranged in the fluid restricting mechanism close to the At the plane 62 , the air injection port in the first opening 650 and the extraction port in the second opening 660 are both located on the plane 62 .

[0069] Please focus on reference Figure 6 ,Such as Figure 6 As shown, the air jet in the first opening 650 is a closed slit. Preferably, the air injection port is a square slit, and the center of the square sli...

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Abstract

The invention provides a fluid restriction mechanism for an immersion lithography machine. The fluid restriction mechanism for an immersion lithography machine is characterized in that an immersion fluid sealing device is arranged in an original fluid restriction mechanism, the immersion fluid sealing device outward blows gas through an opening, an air jet is formed between the fluid restriction mechanism and a projection objective, and an air curtain for blocking contact of extraneous air with a free liquid level is formed above the free liquid level, so the influence of the contact of the immersion fluid with the extraneous air on the exposure quality of the immersion lithography machine is prevented.

Description

technical field [0001] The invention relates to the field of photolithography, in particular to a fluid restriction mechanism for an immersion photolithography machine. Background technique [0002] Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose the pattern on the mask onto a substrate (such as a silicon wafer) coated with photoresist. Immersion lithography refers to filling water (or higher refraction immersion liquid) between the exposure lens and the silicon wafer to replace the corresponding air in traditional dry lithography. Since the refractive index of water is larger than that of air, this increases the numerical aperture of the lens group, thereby obtaining a smaller characteristic linewidth. [0003] Traditional immersion lithography machine structure such as figure 1 As shown, in the device, the main frame 1 supports an illumination system 2, a projection objective lens 4 and a silicon...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor赵丹平聂宏飞张洪博张崇明
OwnerSHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD