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Plasma treatment device and method

A plasma and processing device technology, applied in the field of plasma processing devices, to achieve the effect of preventing damage

Inactive Publication Date: 2015-07-29
JCU CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Inlet port releases process gas into process chamber

Method used

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  • Plasma treatment device and method
  • Plasma treatment device and method
  • Plasma treatment device and method

Examples

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Embodiment Construction

[0056] Such as figure 1 As shown, the plasma processing apparatus 10 embodying the present invention performs plasma processing on an object to be processed. In this example, as an object to be processed, a plate-shaped object to be processed, that is, a substrate 11 (refer to image 3 ) surface (both sides) is treated with plasma as the surface to be treated. In addition, the object to be processed is not limited to the substrate 11 and may be a lead frame or the like. In addition, plasma processing can be performed on a plate-shaped object to be processed, such as an object having unevenness on the surface or a semiconductor chip mounted on the surface of a substrate or the like, or a three-dimensional object to be processed.

[0057] Furthermore, in this example, plasma cleaning (cleaning) for removing resin, etc. adhering to the surface of the substrate was described as the plasma treatment, but the plasma treatment may also be performed on semiconductor chips mounted on...

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Abstract

Provided are a plasma treatment device and method by which plasma surface treatment is performed uniformly on an object to be treated. A substrate (11) is held by a holder (33) and housed inside a treatment chamber. Electrode sets (31, 32) are arranged opposite the surfaces of the substrate (11) and the electrode sets (31, 32) are configured from first electrode units (31a, 32a) and second electrode units (31b, 32b) comprising high-frequency electrodes (25) and ground electrodes (26) arranged in rows. A process gas emitted from an inlet is passed between the electrodes (25, 26) to generate plasma, and the generated plasma removes contaminants on the surface of the substrate (11).

Description

technical field [0001] The present invention relates to a plasma processing device and method for performing plasma processing on an object to be processed in a vacuum processing chamber. Background technique [0002] There is known a plasma processing apparatus that performs various processes using plasma, for example, on a substrate as an object to be processed in a vacuumized processing chamber. As the plasma treatment, there are, for example, cleaning or etching to remove stains on the substrate surface, desmear to remove resin residue (stain) adhering to the wall surface of the through hole when forming a through hole on the substrate, Scum removal, etc. to remove residues (scum) of resist (organic matter) on the substrate surface. In the plasma processing, a process gas (process gas) is introduced in a state where a high-frequency voltage is applied between a pair of electrodes from a high-frequency power source while the processing chamber is vacuumed. Thereby, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46B08B7/00H01L21/304
CPCH01J37/32568H01J37/32541H01J37/32091H01J37/32532H01J37/32036H01J37/3244
Inventor 深泽信司浅野敬祐上山浩幸
Owner JCU CORP
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