Semiconductor device, method of manufacturing same, and method of controlling semiconductor device

Abstract

Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

Description

[0001] Cross References to Related Applications

[0002] Japanese Patent Application No. 2014-036886 filed on February 27, 2014 including specification, drawings and abstract is incorporated herein by reference in its entirety. technical field

[0003] The present invention relates to a semiconductor device, a method of manufacturing the semiconductor device, and a method of controlling the semiconductor device, and more particularly, to a semiconductor device including a photoelectric conversion element such as a photodiode, a method of manufacturing the semiconductor device, and a method of controlling the semiconductor device. Background technique

[0004] Image sensors for automotive digital cameras, particularly digital single-lens reflex cameras, are typically fabricated by forming wiring, applying a glass coating to the wiring, and then forming dichroic color filters and light-collecting on-chip lenses on the glass coating. The reflected light from the subject passes...

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