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Decoherent quasi-3D photonic crystal superradiant light source for laser display

A photonic crystal and laser display technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of different beam quality and large astigmatism, and achieve the effect of reducing complexity, reducing cost and reducing size

Active Publication Date: 2018-03-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] In addition, another problem caused by ordinary semiconductor lasers is that there is a large astigmatism due to the difference in beam quality in the transverse and longitudinal directions.

Method used

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  • Decoherent quasi-3D photonic crystal superradiant light source for laser display
  • Decoherent quasi-3D photonic crystal superradiant light source for laser display
  • Decoherent quasi-3D photonic crystal superradiant light source for laser display

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Embodiment 1

[0029] The invention is a decoherent quasi-three-dimensional photonic crystal superradiation light source suitable for laser display. In this embodiment, we illustrate that the method can realize wide-spectrum edge emission output through simulation and experimental results. Although the wavelength in the experiment is not any one of the red, green and blue primary colors suitable for laser display, based on this working mechanism, we can achieve a wide-spectrum output of any wavelength.

[0030] The specific process of the chirped slot structure scheme is described as follows:

[0031] Step 1, making epitaxial wafers: take N-type GaAs material as substrate 1, and grow N-type photonic crystal waveguide layer 2, AlGaInAs multi-quantum well active layer 3, P-type waveguide layer 4 and P-type lateral confinement layer sequentially on it 5.

[0032] Step 2, fabricate the ridge waveguide on the epitaxial wafer: etch from the top of the epitaxial wafer to the P-type waveguide laye...

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Abstract

A decoherent quasi-three-dimensional photonic crystal superradiation light source suitable for laser display, comprising: an N-type substrate; an N-type photonic crystal waveguide layer fabricated on the N-type substrate; an active layer fabricated on the N-type substrate On the N-type photonic crystal waveguide layer; a P-type waveguide layer, which is made on the active layer, with a raised ridge-shaped waveguide structure in the middle of the P-type waveguide layer, which is a P-type lateral confinement layer. The P-type lateral confinement layer has multiple slots in the lateral direction, forming a chirped slot structure; an insulating layer, which is fabricated on both sides of the P-type lateral confinement layer and in the lateral slots; an N electrode, which is fabricated on the insulating layer And on the P-type lateral confinement layer; a P electrode, which is fabricated on the back of the N-type substrate. Aiming at the spectral width requirement of the red, green and blue primary color lasers, the present invention designs chirped slots to achieve speckle-free projection display for lights of different wavelengths.

Description

technical field [0001] The invention belongs to the field of semiconductor light sources, in particular to a decoherent quasi-three-dimensional photonic crystal superradiation light source suitable for laser display. Background technique [0002] Due to its unique advantages such as wide color gamut and high efficiency, laser display has become the most promising direction in the field of projection display. Due to its small size and high electro-optic conversion efficiency, semiconductor lasers will eventually replace the front wide-spectrum light source - light bulbs, and become the most suitable light source in the laser display field in the future. However, the biggest problem of high-quality laser light sources in laser display applications is spatial coherence. However, some studies have found that when the spectral width of the red light in the trichromatic laser used as the laser display light source reaches more than 5nm, even without any external decoherence compo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
Inventor 郑婉华张斯日古楞王宇飞齐爱谊
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI