Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A programmer for mtm antifuse prom

A technology of anti-fuse and programmer, which is applied in the field of MTM anti-fuse PROM programmer, to achieve the effect of improving the success rate of programming, improving the efficiency of programming, and ensuring the correctness

Active Publication Date: 2019-07-12
58TH RES INST OF CETC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the domestically developed MTM antifuse PROM circuit is quite different from similar foreign products in terms of technology and design, the foreign antifuse programmer cannot well meet the self-designed antifuse PROM circuit, so it is urgent to design a An MTM antifuse PROM programmer that can meet the requirements and can flexibly optimize the programming conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A programmer for mtm antifuse prom
  • A programmer for mtm antifuse prom
  • A programmer for mtm antifuse prom

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The embodiments listed in the present invention are only used to help understand the present invention, and should not be interpreted as limiting the protection scope of the present invention. For those of ordinary skill in the art, they can also Improvements and modifications are made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0024] Such as figure 1 As shown, a programmer suitable for MTM antifuse PROM includes MTM antifuse PROM 1, logic level conversion 2, digital-to-analog converter DAC 3, programmable logic gate array 4, power management unit 5, serial Line communication interface 6, large-capacity static random access memory SRAM 7 and high voltage, high drive current op amp OPA8;

[0025] This programmer can set the digital-to-analog converter DAC 3 on the hardware through the programmable logic gate array 4 to generate variable programming voltage and program...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a programmer for MTM anti-fuse PROM. According to the invention, basic air detection, reading, programming and verification functions of a PROM circuit are included, and a test function of a redundancy anti-fuse unit of the MTM anti-fuse PROM is also increased. Functions under normal mode of the programmer can satisfy basic operations of the PROM circuit for users, and functions under test mode can preprogram and screen PROM in advance under the condition of not influencing normal anti-fuse array of PROM so as to remove defective circuits and raise programming success rate and the MTM anti-fuse PROM and data reliability after the programming.

Description

technical field [0001] The invention relates to the technical field of antifuse programmers, in particular to a programmer suitable for MTM antifuse PROMs. Background technique [0002] Antifuse Programmable Read-Only Memory (PROM) is a highly reliable non-volatile memory, which is often used as the storage of program codes and other key information in aerospace electronic systems. Due to its special application fields, such foreign circuits are often embargoed in China, and the programming method of this kind of MTM antifuse PROM is also monopolized and kept secret by foreign manufacturers. [0003] Due to the important role of the MTM antifuse PROM, the research and design of the MTM antifuse PROM circuit has gradually been carried out in China. Since the domestically developed MTM antifuse PROM circuit is quite different from similar foreign products in terms of technology and design, the foreign antifuse programmer cannot well meet the self-designed antifuse PROM circui...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3436
Inventor 于跃孙杰杰胡小琴徐睿
Owner 58TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products