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Semiconductor device and manufacturing method of the same

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of electric field concentration, deterioration of ONO film reliability, etc., and achieve the effect of improving reliability

Inactive Publication Date: 2017-12-12
RENESAS ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of using an ONO (Oxide-Nitride-Oxide) film as the charge storage film, there is a problem that the electric field is concentrated on the tip portion of the fin-shaped semiconductor portion
This concentration of the electric field can degrade the reliability of the ONO film

Method used

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  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same

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Embodiment Construction

[0046] If necessary for convenience, the following embodiments will be divided into a plurality of parts or embodiments for description. However, unless otherwise specified, they are not independent of each other but have a relationship such that one is a modified example, detailed description, supplementary explanation, etc. of a part or whole of the other.

[0047]In addition, in the following embodiments, when referring to numbers of elements, etc. (including numbers, numerical values, amounts, ranges, etc.), the numbers of elements are not limited to specific numbers, but may be equal to, greater than, or less than specific numbers, unless otherwise specified , or unless in principle the figure is clearly limited to a specific figure, or unless otherwise.

[0048] Furthermore, in the following embodiments, its constituent elements (including operation steps and the like) are not always necessary unless specifically specified, or unless it is clearly necessary to consider i...

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Abstract

To improve reliability of a semiconductor device, a control transistor and a memory transistor formed in a memory cell region are configured to have a double-gate structure, and a transistor formed in a peripheral circuit region is configured to have a triple-gate structure. For example, in the memory transistor, a gate insulating film formed by an ONO film is provided between a memory gate electrode and sidewalls of a fin, and an insulating film (a stacked film of a multilayer film of an insulating film / an oxide film and the ONO film) thicker than the ONO film is provided between the memory gate electrode and a top surface of the fin. This configuration can reduce concentration of an electric field onto a tip of the fin, so that deterioration of reliability of the ONO film can be prevented.

Description

[0001] Cross References to Related Applications [0002] This disclosure refers to the disclosure of Japanese Patent Application No. 2016-111505 filed on June 3, 2016, including specification, drawings and abstract, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a semiconductor device and its manufacturing method, and can be suitably used for a semiconductor device including a fin field effect transistor having a fin-shaped semiconductor portion and its manufacturing method. Background technique [0004] Japanese Unexamined Patent Application Publication No. 2006-41354 describes a memory cell in a nonvolatile semiconductor memory device having a split gate structure, which has a storage gate formed on a convex substrate and the side faces of the storage gate used as a channel. [0005] A Fin Field Effect Transistor (FINFET) has a structure in which a fin-shaped semiconductor portion is formed, an...

Claims

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Application Information

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IPC IPC(8): H01L27/11568H01L27/11573H01L29/423H01L29/66H01L29/78H01L21/28
CPCH01L29/4234H01L29/42364H01L29/66795H01L29/7855H10B43/40H10B43/30H01L21/823821H01L27/0924H01L29/40114H01L29/40117H01L29/42344H01L29/792H10B43/50H01L27/0886H01L21/823431H01L21/823481H01L29/7851H01L29/42368
Inventor 三原龙善
Owner RENESAS ELECTRONICS CORP
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