A method for preparing one-dimensional oxide fiber field effect transistor based on pulling method

A technology of oxide and fiber fields, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex operation process, equipment restriction development and application, etc., and achieve broad application prospects, good product performance and low cost Effect

Inactive Publication Date: 2019-10-15
QINGDAO UNIV
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  • Application Information

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Problems solved by technology

However, the complex operation process and expensive equipment required by near-field electrospinning limit the development and application of this technology.

Method used

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  • A method for preparing one-dimensional oxide fiber field effect transistor based on pulling method
  • A method for preparing one-dimensional oxide fiber field effect transistor based on pulling method
  • A method for preparing one-dimensional oxide fiber field effect transistor based on pulling method

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Experimental program
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Embodiment

[0024] In this example, the "pulling method" is used to prepare In 2 o 3 The process steps of fiber FET devices mainly include:

[0025] (1)In 2 o 3 Preparation of precursor solution and In 2 o 3 Fiber preparation:

[0026] Add 0.1 gram of indium nitrate and 0.4 gram of polyvinylpyrrolidone (1.3 million molecular weight) to 5 milliliters of dimethylformamide solvent, and rotate with a magnetic stirrer for 12 hours to obtain a colorless and transparent viscous precursor solution; Drop the body solution onto the dust-free test paper, and blow it with a nitrogen gun for 1 minute until it becomes dry gel. Use a medical syringe needle with an inner diameter of 0.15 mm to "dip" the surface of the dry glue, and then pull the needle outward at a speed of 10 cm per second, and the filament at the end of the needle will be lifted. Under the action of surface tension and gravity, solid filaments will become thinner and fall (such as figure 1 a). We used a 200 nm thick SiO 2 The...

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Abstract

The invention discloses a czochralski method-based method for preparing a one-dimensional oxide fiber field effect transistor. The preparation method comprises the steps of S1, preparing an In2O3 precursor solution; S2, preparing In2O3 fibers; S3, preparing a source electrode and a drain electrode. The overall technical scheme of the invention is low in cost, simple in process, reliable in principle, good in product performance, environment-friendly in preparation and wide in application prospect. The method provides a feasible scheme for the large-area preparation of high-performance fiber FET devices.

Description

technical field [0001] The invention belongs to the technical field of field-effect transistor preparation, and relates to a method for preparing a field-effect transistor based on a one-dimensional metal oxide fiber; 2 o 3 ) method for high-performance field-effect devices of fibers. Background technique [0002] At present, the research and development of inorganic materials has become an important driving force for the rapid development of the electronics industry. Modern microelectronic technology is mainly developed on the basis of inorganic semiconductor materials such as silicon, germanium and gallium arsenide. Germanium crystals were the first transistor material, while silicon has dominated the microelectronics industry for the better part of a century. However, the preparation of such devices requires high cost, complex process and harsh preparation environment. For this reason, after continuous research and exploration, scientists proposed to replace tradition...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/34H01L29/06H01L29/10H01L29/24
Inventor单福凯刘奥刘国侠
OwnerQINGDAO UNIV