Multi-layer bonding system integrated packaging structure applied to thin film bulk acoustic wave device
A thin-film bulk acoustic wave and system integration technology, which is applied in the direction of electrical components and impedance networks, can solve the problems of large device volume, complex packaging process, and low processing efficiency, and achieve device volume reduction, which is conducive to device miniaturization and convenient processing. Effect
Inactive Publication Date: 2018-02-23
CHINA ELECTRONICS TECH GRP NO 26 RES INST
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Problems solved by technology
The packaging process of existing thin film bulk acoustic wave devices is complex, and each chip needs to be individually packaged in a special shell, and then integrated, that is, packaging and integration are carried out separately, and each chip needs to be packaged independently, resulting in relatively low processing efficiency. Low
In addition, in order to realize the connection between the chip and the external circuit, the existing ceramic substrate needs to process various via holes on the ceramic substrate. For ceramic materials, these holes can only be processed by mechanical means, and the mechanical processing method determines the quality of these ceramic materials. A certain thickness is required, otherwise machining is difficult, resulting in thicker ceramic substrates
The thicker the ceramic material, the larger the volume of the final device, which is not conducive to the miniaturization of the device.
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[0015] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0016] see figure 1 , as can be seen from the figure, the present invention is applied to the multilayer bonding system integrated packaging structure of thin film bulk acoustic wave devices, including the bottom layer 1, the middle layer 2 and the top layer 3 stacked up and down in sequence, wherein the middle layer 2 can be a layer , can also be multi-layer, which is determined according to the specific device circuit. The base material of each layer is a silicon substrate, and the silicon substrates between two adjacent layers are connected as a whole through a bonding process. An accommodating cavity 4 is opened on part of the silicon substrate, and a chip 5 is installed in the accommodating cavity 4 , and the chip 5 is connected to a circuit through a via hole 6 on the silicon substrate. The chips here can be various active chips or va...
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The invention discloses a multi-layer bonding system integrated packaging structure applied to a thin film bulk acoustic wave device. The structure comprises a bottom layer, a middle layer and a top layer, which are vertically stacked in sequence, wherein is one or more of middle layers can be provided, the base material of each layer is a silicon substrate, and the silicon substrate between two adjacent layers is connected into a whole through a bonding process. A containing cavity is arranged in the part of the silicon substrate, a chip is arranged in the containing cavity, and the chip carries out needed circuit connection through a through hole in the silicon substrate. According to the structure, a multi-layer bonding process is utilized to form a shell structure suitable for system integration, an FBAR device and other devices are organically combined, so that a purpose of system-level packaging is achieved, and thus a packaging process is simplified, the efficiency is improved,and the miniaturization of the device is realized.
Description
technical field [0001] The invention relates to thin film bulk acoustic wave devices, in particular to a multilayer bonding system integrated packaging structure applied to thin film bulk acoustic wave devices, and belongs to the field of thin film bulk acoustic wave filter module packaging. Background technique [0002] With the development of thin film and micro-nano manufacturing technology, electronic devices are developing rapidly in the direction of miniaturization, high-density multiplexing, high frequency and low power consumption. The film bulk acoustic resonator (FBAR) developed in recent years adopts an advanced resonance technology, which converts electrical energy into sound waves through the inverse piezoelectric effect of piezoelectric films to form resonance. This resonance technology can be used to make Advanced components such as thin-film frequency shaping devices. Film Bulk Acoustic Resonator (FBAR) acoustic wave device has the characteristics of small s...
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IPC IPC(8): H03H9/17
CPCH03H9/172
Inventor金中唐小龙杜雪松
OwnerCHINA ELECTRONICS TECH GRP NO 26 RES INST