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Electrostatic protection device

An electrostatic protection and device technology, applied in the field of electrostatic protection devices, can solve the problems of affecting application, high maintenance voltage, difficult to guarantee, etc., and achieve the same effect of full utilization, improvement of maintenance voltage, and electrostatic discharge capability.

Active Publication Date: 2018-11-13
HUNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above situation, the purpose of the present invention is to solve the problem in the prior art that the existing electrostatic protection devices are difficult to ensure a higher sustain voltage, which affects the practical application to a certain extent

Method used

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Embodiment Construction

[0023] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0024] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," a...

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Abstract

The invention provides an electrostatic protection device. The electrostatic protection device comprises a substrate, wherein a deep N well is arranged in the substrate, a first N well, a first P welland a second N well are sequentially arranged in the deep N well from left to right, a first N+ injection region and a first P+ injection region are sequentially arranged in the first N well from left to right, a second N+ injection region, a second P+ injection region and a third N+ injection region are sequentially arranged in the first P well, a third P+ injection region and a fourth N+ injection region are sequentially arranged in the second N well, the first N+ injection region and the first P+ injection region both are connected with a positive electrode, the third P+ injection region and the fourth N+ injection region both are connected with a negative electrode, and the shape of the electrostatic protection device is axisymmetric octagon. With the electrostatic protection device proposed by the invention, the maintenance voltage can be increased, and the ESD robustness is improved.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection for integrated circuits, in particular to an electrostatic protection device. Background technique [0002] In all links of integrated circuits, charge accumulation may occur. Under certain conditions, the charge will be transferred, and the instantaneous large current may exceed the critical value of the device and cause the chip to burn. Statistical data show that: Electro Static Discharge (ESD) is the main cause of failure of integrated circuits, especially in power integrated circuits. Therefore, electrostatic discharge has become the most important issue for designers. [0003] In order to reduce the economic loss caused by electrostatic discharge in integrated circuits, the most effective method is to design corresponding ESD protection devices with high performance ratio for each input and output port of integrated circuits. At present, ESD protection measures for conven...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0259
Inventor 陈卓俊曾云彭伟金湘亮吴志强
Owner HUNAN UNIV
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