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Dressing method of grinding pad

A technology for grinding pads and grinding areas, which is applied to the components of grinding machine tools, grinding/polishing equipment, abrasive surface adjustment devices, etc., can solve the problems of reduced grinding removal rate and poor surface uniformity of grinding pads, and achieve improved Grinding removal rate, reduced replacement frequency, and extended service life

Inactive Publication Date: 2020-01-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is mainly the problem that the surface uniformity of the polishing pad becomes poor in the existing CMP process, which leads to the reduction of the grinding removal rate.

Method used

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  • Dressing method of grinding pad

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Embodiment Construction

[0026] The grinding pad dressing method of the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use inaccurate proportions, which are only used to facilitate and clearly illustrate the purpose of the embodiment of the present invention. In addition, the components in some drawings are different from those in other drawings. Components may be the same, although these components can be easily identified in all drawings, but in order to make the description of the drawings clearer, this specification will not mark all the same components with the same reference numerals in each figure.

[0027] At present, chemical mechanical polishing (CMP) equipment is widely used in the manufacturing process of semiconductor elements, ...

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Abstract

The invention relates to a dressing method of a grinding pad. The grinding pad is dressed by using a dressing disc of a grinding pad dresser, wherein during the dressing of a grinding area, in the direction from the center of the grinding pad to the edge, the downward pressure exerted by the dressing disc on the grinding area gradually decreases, and the dressing degree of the grinding pad is different with different downward pressure. According to the dressing method of the grinding pad, the problem that the homogeneity of the grinding pad becomes poor after a period of grinding process in the existing CMP process can be improved, grinding liquid is advantageously and evenly distributed in a groove of the grinding pad, the grinding removal rate can be increased, and the service life of the grinding pad is prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a polishing pad dressing method. Background technique [0002] With the development of large-scale integrated circuits, semiconductor elements are assembled on the surface of the wafer with high density, and the wafer needs to be ground finely. Chemical Mechanical Polishing (CMP) is a polishing process that simultaneously performs mechanical polishing and chemical polishing on a wafer. [0003] In the existing CMP device, the grinding pad (pad) on the grinding platform is set to rotate together with the grinding platform, and the wafer is contacted with the grinding pad after being sucked by the grinding head (polish head) and is pressurized. For example, reciprocate and rotate along the radial direction of the polishing pad, and the wafer is mechanically polished by friction. In addition, the polishing liquid is supplied to the polishing pad through the slurry supply uni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B53/017
CPCB24B53/017
Inventor 唐强
Owner SEMICON MFG INT (SHANGHAI) CORP
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