Advanced process control method and system of VT-BS model and semiconductor equipment

An advanced process control, VT-BS technology, used in semiconductor/solid-state device manufacturing, special data processing applications, other database retrieval, etc., can solve problems such as deterioration, waste of production capacity, and difficulty in process control.

Pending Publication Date: 2021-02-02
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both LotA and LotB have injected dose A in the VT injection step, so they cannot be placed in BoatSlot1-25 at the same time, and must be split into two batches
Causes waste of production capacity; if LotB is artificially placed in BoatSlot26-50 to work in the same batch as LotA, the performance of LotB will not be repaired, but will be deteriorated, which brings great difficulty to process control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Advanced process control method and system of VT-BS model and semiconductor equipment
  • Advanced process control method and system of VT-BS model and semiconductor equipment
  • Advanced process control method and system of VT-BS model and semiconductor equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0106]In order to make the purpose, advantages and features of the present invention more clear, the advanced process control method, system and semiconductor equipment of the VT-BS model proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In this specification, similar reference numerals and letters are used to refer to similar items, therefore, once an item is defined in one figure, it does not require further discussion in subsequent figures. These terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein includes a series of steps, the order in which these steps are presented is not necessarily the only order in which these steps can be perf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an advanced process control method and system of a VT-BS model and semiconductor equipment. The advanced process control method comprises the following steps: providing global VT-BS path configuration, global VT-BS furnace tube Recipe configuration and global VT-BS furnace tube ChargeRule configuration; according to the global VT-BS path configuration, the global VT-BS furnace tube Recipe configuration and the global VT-BS furnace tube ChargeRule configuration, performing batch grouping on a plurality of Lots to be subjected to batch grouping through a VT-BS path combination configuration algorithm to obtain VT-BS path combination, VT-BS Batch and VT-BS Path information of Wafer; on the basis of whether the Wafer is in the VT-BS Batch in the activated state or not, batching Lots for preparing VT injection operation, and carrying out VT Implant operation; and according to the VT-BS Batch and the current furnace tube Recipe information, determining BoatSlot of Wafer in all Lots for preparing furnace tube operation, and carrying out furnace tube operation. According to the advanced process control method provided by the invention, the actual application of a VT-BS model can be accurately controlled, a difference between VT Implant dose compensation furnace tubes BoatSlot can be realized, and a product yield and a yield are improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to an advanced process control method, system and semiconductor equipment of a VT-BS model. Background technique [0002] In the semiconductor manufacturing process, in order to arrange discrete devices and integrated circuits, different kinds of thin films need to be grown on the substrate of the wafer. Key film layers such as gate oxide, floating gate, and SONOS Nitride in CMOS devices are usually grown in a furnace tube machine. [0003] However, the huge volume of the furnace tube will cause the temperature and airflow in different positions to be inconsistent, and an inherent trend that cannot be adjusted will be formed inside the furnace tube, and the inherent trend between different machines and the inherent trend before and after machine maintenance will be different. This inherent trend will inevitably lead to differences in film thickness and film quality...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/67G06F16/903
CPCH01L21/67276G06F16/903Y02P90/02
Inventor孙天拓高杏周杰陈毅俊金君男
OwnerSHANGHAI HUALI MICROELECTRONICS CORP