Carrier conversion efficiency measurement platform and method

A technology of measurement platform and measurement method, which is applied in the field of measurement platform, can solve the problems that have not yet been investigated to measure the conversion rate of carriers excited by electron beams in semiconductor materials.

Active Publication Date: 2021-03-26
YUNNAN ASTRONOMICAL OBSERVATORY CHINESE ACAD OF SCI +1
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  • Abstract
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Problems solved by technology

No method has been investigated to measure the carrier convers

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  • Carrier conversion efficiency measurement platform and method

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application shall have the usual meanings understood by those skilled in the art.

[0028] "First", "second" and similar words used in the embodiments do not indicate any order, quantity or importance, but are only used to distinguish different components. "Comprising" or "comprising" and similar words mean that the elements or items appearing before the word include t...

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Abstract

The invention relates to a carrier conversion rate measurement platform and method, and the platform comprises a vacuum cavity which is internally provided with an electron beam generation system, andthe electron beam generation system is provided with an electron beam flow detection device. An anode target surface is arranged in front of the electron beam generation system, the anode target surface is an annular conductor with a central circular hole, a thin cylindrical semiconductor luminescent material is arranged in the central circular hole, a bonding layer is arranged between the columnside of the semiconductor material and the central hole, and the electron beam just completely covers the circular surface of the semiconductor. And an annular semiconductor temperature control device is arranged on the surface of the anode target surface outside the central hole. An optical power measuring device and a spectrum measuring device are arranged in front of the semiconductor materialback to one side of the electron beam; after the electron beam enters the semiconductor material, accumulated electrons form a loop with the electron beam emitting end from the semiconductor materialthrough the bonding layer and the anode target surface. Electron beam excitation parameters and semiconductor light-emitting materials with high light-emitting efficiency can be selected for a semiconductor light source based on electron beam excitation semiconductor light emitting.

Description

technical field [0001] The invention relates to a measurement platform, in particular to a carrier conversion rate measurement platform, and also to a measurement method for the carrier conversion rate. Background technique [0002] When an electron beam is incident on a semiconductor material, the interaction between the incident electrons and the electrons and nuclei inside the atom is mainly the Coulomb interaction. There are currently two theories about the excitation mechanism of electrons after they are incident into the semiconductor: one theory believes that the incident electrons first excite the inner electrons of the atoms near the surface of the material through inelastic scattering, and the electrons will be excited due to the high energy of the incident electrons into high-energy free electrons, called high-speed "secondary" electrons. The high-speed "secondary" electrons will excite other valence electrons to the conduction band, becoming "secondary" electron...

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Application Information

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IPC IPC(8): G01R31/26G01R31/265
CPCG01R31/2648G01R31/2653
Inventor 黄善杰王岭雪许方宇蔡毅宋腾飞
Owner YUNNAN ASTRONOMICAL OBSERVATORY CHINESE ACAD OF SCI
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