Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Driving circuit, control chip circuit, power adapter and electronic equipment

A drive circuit, drive control technology, applied in the field of electronics

Active Publication Date: 2021-11-19
SHENZHEN INJOINIC TECH
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides a driving circuit, a control chip circuit, a power adapter and electronic equipment, which can solve the EMI problem caused by the GaN power tube in charging applications and meet the accuracy requirements of the driving voltage of the GaN power tube

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Driving circuit, control chip circuit, power adapter and electronic equipment
  • Driving circuit, control chip circuit, power adapter and electronic equipment
  • Driving circuit, control chip circuit, power adapter and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order for those skilled in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application are clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only the present invention. Some, but not all, embodiments of the application. Based on the description of the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts fall within the protection scope of the present application.

[0026] The terms "first", "second" and the like in the specification and claims of the present application and the above drawings are used to distinguish different objects, rather than to describe a specific order. Furthermore, the terms "include" and "have", as well as any variations thereof, are intended to cover a non-exclusive i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a driving circuit, a control chip circuit, a power adapter and electronic equipment. The driving circuit comprises an operational amplifier circuit, a comparator, a first NMOS tube, a second NMOS tube, a third NMOS tube, a first PMOS tube, a second PMOS tube, a first driving control module and a second driving control module. A first resistor, a second resistor and the first NMOS tube are used for forming an LDO negative feedback system. By adopting the embodiment of the invention, the EMI problem caused by a GaN power tube in the charging application can be solved, and the accuracy requirement of the driving voltage of the GaN power tube can be met.

Description

technical field [0001] The present application relates to the field of electronic technology, in particular to a drive circuit, a control chip circuit, a power adapter and electronic equipment. Background technique [0002] With the advancement of technology and the continuous reduction of defect rate, the advantages of gallium nitride (GaN) in electronic power supplies for AC and DC power conversion, changing voltage levels, and ensuring reliable power supply with a certain number of functions are becoming more and more obvious. [0003] Furthermore, in practical applications, GaN will be considered as the material of GaN power tubes. However, during the charging process, because GaN works at a higher frequency, there will be a large di / dt, which will cause serious electromagnetic waves. Electromagnetic interference (EMI), therefore, how to solve the EMI problem caused by GaN power tubes in charging applications needs to be solved urgently. Contents of the invention [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/44
CPCH02M1/08H02M1/44Y02B70/10
Inventor 江力
Owner SHENZHEN INJOINIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products