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MTP device and manufacturing method thereof

A manufacturing method and device technology, applied in the field of MTP devices and their manufacturing, can solve problems such as poor data storage capability, and achieve the effects of improving reliability, ensuring reliability, and improving data storage capability.

Pending Publication Date: 2022-03-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present application provides an MTP device and its manufacturing method, which can solve the problem of poor data storage ability of the MTP device after erasing and writing

Method used

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  • MTP device and manufacturing method thereof
  • MTP device and manufacturing method thereof
  • MTP device and manufacturing method thereof

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Embodiment Construction

[0029] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0030] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention provides a manufacturing method of an MTP device. The manufacturing method comprises the following steps: providing a substrate on which a floating gate polycrystalline silicon layer and an ONO side wall are formed; and forming an interlayer dielectric layer. The step of forming the interlayer dielectric layer comprises the steps of forming a barrier layer and a BPSG layer on the floating gate polycrystalline silicon layer; executing a high-temperature reflux process and a wet cleaning process; and forming an oxide layer on the BPSG layer. The invention also provides an MTP device. According to the method, the interlayer dielectric layer of the barrier layer-BPSG layer-oxide layer structure is formed, and the BPSG layer has good filling capability after the high-temperature backflow process, so that the condition that the MTP device is bombarded and damaged by plasmas due to the use of the HDP process can be avoided, and the reliability of the MTP device is ensured. Furthermore, due to triple protection of the barrier layer, the BPSG layer and the oxide layer, the situation that the floating gate polycrystalline silicon layer below the barrier layer is damaged is avoided, and the data storage capacity of the MTP device is improved.

Description

technical field [0001] The present application relates to the technical field of MTP devices, in particular to an MTP device and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, it has become a trend to use semiconductor chips to store data. Especially in a micro central processing unit (MCU), a large number of easy-to-integrate storage units are used. According to different storage types, storage devices can be divided into: one-time programmable (OTP), multiple times programmable (MTP), flash memory (Flash) devices, and the like. The OTP device can write data once, and then the program will be solidified. It is cheap and suitable for low-cost applications with customization requirements. Sensitive occasions may be used for development; MTP devices are in between, the cost is low, and they can be written many times and used repeatedly. The polysilicon floating gate of the MTP device is mainly used to save and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/788H01L27/11521H10B41/30
CPCH01L29/0684H01L29/66825H01L29/788H10B41/30
Inventor 王乐平隋建国尤鸿朴
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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