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Flash memory detection method and device

A detection method and flash memory technology, applied in static memory, instruments, etc., can solve problems such as data reading errors, and achieve the effects of improving accuracy, shortening scanning time, and narrowing the scope

Active Publication Date: 2022-04-15
ALIBABA (CHINA) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the development of computer technology, the technology of NAND FLASH is also constantly upgraded. However, as the temperature changes, the threshold voltage of NAND FLASH will also change continuously, which will lead to the use of the default voltage value for data reading. The possibility of data reading errors will also increase

Method used

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Embodiment Construction

[0046] Many specific details are set forth in the following description to fully understand the specification. However, this specification can be implemented in many different fails thereof, and those skilled in the art can do a similar promotion without departing from the connotation of the specification, so this specification is not limited by the specific implementation disclosed below.

[0047] The terms used in one or more embodiments of the present specification are only for the purpose of describing particular embodiments, not intended to limit the one or more embodiments of the specification. The "one" and "" "" "" "" and "" "" and "" "" "" "," and "" "as used in the present specification are also intended to include most forms unless the context clearly represents other meaning. It should also be understood that the terms "and / or" used in one or more embodiments of the present specification refer to any or from any or more associated listing items.

[0048] It will be a...

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Abstract

The embodiment of the invention provides a flash memory detection method and device. The flash memory detection method comprises the following steps: determining a to-be-scanned area of a flash memory; determining a word line to be scanned in the area, and scanning the word line; the error correction unit corresponding to the word line is determined according to the scanning processing result, the reference voltage is determined through the error correction unit, the word line to be scanned is selected from the area to be scanned for scanning, scanning of all the area to be scanned is avoided, and the scanning time is shortened.

Description

Technical field [0001] Embodiments of this specification relate to data storage technology, and in particular, to a method of detecting a flash memory. Background technique [0002] With the development of computer technology, Nand Flash's technology is constantly upgrading, but with temperature changes, NAND Flash threshold voltages will change, which will cause data to read using the default voltage value, The possibility of data reading errors will also increase. Therefore, there is an urgent need for a simple and reliable method to solve the above problems. Inventive content [0003] In view of this, the embodiment of this specification provides a method of detecting a flash memory. One or more embodiments of the present specification also relate to a flash memory detecting device, a computing device, a computer readable storage medium, and a computer program to solve the technical defects present in the prior art. [0004] According to the first aspect of the embodiment of ...

Claims

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Application Information

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IPC IPC(8): G11C29/50G11C29/42
Inventor 段小康
Owner ALIBABA (CHINA) CO LTD
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