Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as unsatisfactory protection effect of sealing rings, and prevent cracks from spreading toward the integrated circuit area. Improves shielding, preventing moisture and ions from entering the integrated circuit area

Pending Publication Date: 2022-05-17
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the protection effect of the sealing ring in the prior art is not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0052] Semiconductor devices are often provided with a sealing ring extending around the periphery of an integrated circuit area of ​​the semiconductor device. A seal ring is usually a continuous ring of one or more metal layers. In one or more example embodiments, the seal ring may have one or more functions of providing protection from external moisture from entering integrated circuit components formed in the semiconductor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof, the semiconductor device comprises a semiconductor substrate, an integrated circuit area formed in the semiconductor substrate and one or more sealing rings, and the one or more sealing rings are arranged in the semiconductor substrate, are arranged around the periphery of the integrated circuit area and are used for protecting the integrated circuit area; the sealing ring is of a wave-shaped structure.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technology, and in particular, relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. As the size of semiconductor devices continues to decrease, the requirements for the sealing ring on the periphery of the chip to prevent moisture and ions from entering the chip and prevent cracks from propagating into the chip are increasingly demanding. However, the protection effect of the sealing ring in the prior art is not ideal. Contents of the invention [0003] In the semiconductor device and the manufacturing method thereof provided by the embodiments of the present invention, the sealing ring has a stronger protection effect. [0004] The semiconductor device according to the embodiment of the present invention includes a semiconductor substrate, an integrated circ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/77
CPCH01L23/562H01L23/564H01L21/77H01L23/00
Inventor 杨年旺黄信斌
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com