Setting method and device for continuously gradual periodical wide band omnibearing all-medium reflector

Abstract

The present invention is the setting method and device of continuously gradual periodical wide-band omnibearing all-medium reflector. On transparent material substrate, two kinds of optical dielectric material of different refractive indexes are covered periodically in the periodical gradual change amount of 0.005-0.03 and period number of 10-200. The structure features that common dielectric material combination, such as TiO2 / SiO2, is used to develop wide-band omnibearing reflector for visible light and infrared band application. This kind of device can ensure p component and s component of light wave in all incident angles and reflective rate near 100 % in relatively wide frequency range. The present invention has attractive application foreground in optical device and light communication field.

Description

1. Technical field [0001] The invention belongs to the field of new materials and new technologies, and mainly relates to the use of the localization effect of photon propagation in a novel one-dimensional dielectric microstructure, and relates to a one-dimensional photon full bandgap structure and a continuous gradient period all-dielectric lossless broadband omnidirectional reflection device setting method and device. 2. Background technology [0002] In the technical fields of integrated photonic devices and optical communications in the future, photonic bandgap materials and structures (photonic crystals) will occupy a very important position. It is an artificial microstructure material that confines and conducts photons with a periodic distribution of dielectric constant. . Although the one-dimensional photonic bandgap material has been widely used in the fields of microelectronics and optoelectronics such as semiconductor lasers, due to the limited space period of its...

AI Technical Summary

Problems solved by technology

Although the one-dimensional photonic bandgap material has been widely used in the fields of microelectronics and optoelectronics such as semiconductor lasers, due to the limited space period of its structure and the influence of the Brewster effect, the structure does not have an omnidirectional energy gap, thereby limiting its scope of application

Although there are currently two methods to partially solve this problem, such as increasing the ratio of the permittivity of the two dielectric materials or adding another periodic structure, the so-called photon heterostructure, to reduce the influence of the Brewster effect and achieve effective Omnidirectional reflection with a certain band gap, but these methods have certain limitations, such as improving the selectivity of the material and increasing the complexity of the structure, and the band gap width is limited, and it also increases the difficulty in the preparation process , not very compatible with the current microelectronic optoelectronic fabrication process

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