Apparatus for generating driving voltage for sense amplifier in a memory device

Abstract

The invention relates to a device for generating driving voltage for sense amplifier, which has the boost ability of generating the core voltage for the sense amplifier. The invention comprises: a voltage output device which is used to output the predetermined voltage value to drive the sense amplifier to a pitch point; a pressure-boosting device for the first core voltage which is connected between the power supply and the pitch point; and a pressure-boosting device for the second core voltage which is connected between the power supply and the pitch point, wherein, the first and the second core voltage pressure-boosting devices are orderly conducted to increase the voltage level of the pitch point connected with the sense amplifier to the power supply voltage level. The device for generating driving voltage for sense amplifier has the advantages that the of enhancing the effectiveness of the sense amplifier, executing the detection amplification in a short time, enhancing the core voltage used as driving voltage since the first and the second core voltage pressure-boosting devices are orderly conducted, reducing the power noise, and reducing power consumption since each core voltage pressure-boosting driver can also be configured in each memory bank.

Description

technical field [0001] The present invention relates to an apparatus for generating a driving voltage required for a sense amplifier, in particular, the apparatus has a boosted capability for generating a core voltage required for the sense amplifier. Background technique [0002] As generally well known in the art, a conventional method of reading data stored in memory cells of a memory device such as Dynamic Random Access Memory (DRAM), Synchronous Dynamic Memory (SDRAM) and Double Data Rate Synchronous Dynamic Memory (DDR SDRAM). The word lines are mainly used to transfer the charges stored in the memory cells into the bit lines. Then, for example, by using a sense amplifier for detecting and amplifying any slight potential difference between the bit lines (B / L) and ( / B / L), the potential of the bit line is switched to a high potential level, and the bit line The potential of the bar is switched to a low potential level. [0003] In this case, if the potential differenc...

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Problems solved by technology

[0012] However, image 3 and Figure 4 The circuit shown has the disadvantage that the core voltage is necessarily overdriven for a short time after the operation of the sense amplifier, thus increasing the power consumption

[0014] However, in Figure 5 In the configuration shown, even though only memory bank 501 is active, core voltage boost driver 510 is still powering memory banks 501 and 502, which causes a large power consumption problem

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