Member separating apparatus and processing apparatus
a technology of separating apparatus and processing apparatus, which is applied in the direction of electrical equipment, adhesives, layered products, etc., can solve the problems of high substrate cost, difficult to obtain a large area, and inability to put sos technology into practical use to da
Inactive Publication Date: 2003-05-15
SAKAGUCHI KIYOFUMI +4
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- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The apparatus effectively separates substrates with minimal defects and low risk of drop, facilitating the production of high-quality SOI substrates with improved film thickness uniformity and surface planarity, while reducing manufacturing costs and simplifying the process.
Problems solved by technology
However, the SOS technology has not been put into practical use to date because, e.g., a large amount of crystal defects are produced by lattice mismatch in the interface between the Si layer and the underlying sapphire substrate, aluminum that forms the sapphire substrate mixes in the Si layer, the substrate is expensive, and it is difficult to obtain a large area.
One reason for this is that when the jet is not ejected in the vertical direction, the jet orbit is bent downward by gravitation, and it becomes difficult to inject the jet to the desired position (separation region) of the bonded substrate stack.
In this case, the substrate holding portion can hardly reliably chuck the bonded substrate stack unless the transfer robot transfers the substrate to the substrate holding portion while accurately holding it vertically, and the bonded substrate stack may sometimes drop.
Method used
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of Separating Apparatus]
[0181] As an application example of the above separating apparatus, a method of manufacturing an SOI substrate will be described below with reference to FIGS. 1A to 1E.
[0182] As a single-crystal Si substrate 11, a p- or n-type (100) single-crystal Si substrate having a thickness of 625 [.mu.m], a diameter of 5 [inch], and a resistivity of 0.01 [.OMEGA..multidot.cm] was prepared. This single-crystal Si substrate 11 was dipped in an HF solution and anodized to form a porous Si layer 12 having a thickness of 12 [.mu.m] (FIG. 1A). The anodizing conditions are as follows.
[0183] Current density: 7 [mA / cm.sup.2]
[0184] Anodizing solution: HF:H.sub.2O:C.sub.2H.sub.5OH=1:1:1
[0185] Process time: 11 [min]
[0186] This substrate was heated to 400[.degree. C.] in an oxygen atmosphere and oxidized for 1 hr. With this process, inner walls of pores in the porous Si layer 12 were covered with thermal oxide films. Subsequently, a single-crystal Si layer 13 having a thickness of 0...
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Abstract
This invention is to prevent a substrate from dropping when it is transferred / received to / from a separating apparatus. The support surfaces of substrate holding portions (22, 23) are made horizontal, and a substrate (21) to be separated is mounted on one substrate holding portion (22) in a horizontal state (2A). The substrate holding portions (22, 23) are pivoted about rotary shafts (26, 27), respectively, to make the support surfaces of the substrate holding portions (22, 23) vertical so that the substrate (21) is sandwiched by the substrate holding portions (22, 23) (2B) The substrate holding portions (22, 23) are rotated about rotary shafts (24, 25), respectively, and simultaneously, high-pressure, high-speed water is ejected from an ejection nozzle (28) to separate the substrate (21) into two substrates (21a, 21c). The substrate holding portions (22, 23) are pivoted about the rotary shafts (26, 27), respectively, to make the support surfaces horizontal (2C). With this arrangement, the substrate can be supported from the lower side and transferred in the horizontal state.
Description
[0001] 1. Field of the Invention[0002] The present invention relates to a member separating apparatus and processing apparatus, member separating method, and semiconductor substrate manufacturing method.[0003] 2. Description of the Related Art[0004] A substrate (SOI substrate) having an SOI (Silicon On Insulator) structure is known as a substrate having a single-crystal Si layer on an insulating layer. A device using this SOI substrate has many advantages that cannot be achieved by ordinary Si substrates. Examples of the advantages are as follows.[0005] (1) The integration degree can be increased because dielectric isolation is easy.[0006] (2) The radiation resistance can be increased.[0007] (3) The operating speed of the device can be increased because the stray capacitance is small.[0008] (4) No well step is necessary.[0009] (5) Latch-up can be prevented.[0010] (6) A completely depleted field-effect transistor can be formed by thin film formation.[0011] Since an SOI structure has ...
Claims
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IPC IPC(8): H01L21/00H01L21/68H01L21/762
CPCH01L21/67092H01L21/76259Y10T156/1928Y10T156/1922Y10T156/17Y10T156/1374Y10T83/364H01L21/68
InventorSAKAGUCHI, KIYOFUMIYONEHARA, TAKAOOMI, KAZUAKIYANAGITA, KAZUTAKAMIYAKOGAWA, TOSHIKAZU
OwnerSAKAGUCHI KIYOFUMI