Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
a technology of selenide and sulfide, applied in the direction of vacuum evaporation coating, coating, semiconductor devices, etc., can solve the problems of reducing the performance of cigs-based pv devices, affecting the development of cigs-based photovoltaic (pv) devices on flexible polymer substrates, and affecting the current collection of devices, so as to reduce the yield strength of films
Inactive Publication Date: 2011-11-10
ESER ERTEN
View PDF2 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
"The present invention is based on the discovery that the root cause of cracking in Mo films is a chemical reaction with Se, which reduces the yield strength of the film. The invention utilizes means for inhibiting this chemical reaction by limiting the exposure of the Mo film to Se and by incorporating oxygen into the Mo at concentrations high enough to passivate against reaction with Se. The invention provides new compositions of matter and a process for inhibiting the reaction of Mo with Se during the formation of CIGS films, which involves coating the substrate with Mo containing a sufficient amount of oxygen to passivate against Se, and limiting the amount of Se deposited on the Mo coated substrate to only that amount required to form a CIGS film thereon."
Problems solved by technology
In the past, both of these issues have impeded the development of CIGS based photovoltaic (PV) devices on flexible polymer substrates.
Such cracks dramatically reduce the performance of CIGS based PV devices.
When only the contact line 1 is used, current collection from the device is severely limited compared to the case when contact line 2 is placed orthogonal to line 1.
These disclosures allege that as a result of this addition of oxygen or water vapor into the sputtering gas, oxygen is entrained into the Mo layer creating a higher level of internal compressive stress in the Mo layer as a result of which “these layers are able to tolerate temperature changes that occur in subsequent processing without suffering temperature-induced cracking and fracturing.” However, these patents fail to state the amount of oxygen entrained into the films, and instead, give the range of the relative amount of water vapor or oxygen in the sputtering gas.
Indeed, studies to the issuance of these patents have concluded without exception, that Mo cracking is an unresolved problem.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023]The invention is based on a set of experiments. During these experiments CIGS films were deposited, in a roll-to-roll deposition reactor, on Mo coated Upilex-S polyimide web. These experiments compared the Mo cracking and adhesion of the CIGS films to Mo for depositions performed under conditions of high and a factor of 10 lower levels of selenium (Se) vapor. Table I summarizes these results and also gives the composition of the CIGS films.
[0024]Consumption of Se was estimated by measuring Se level in the source before and after certain number of runs. Adhesion results were estimated from the amount of film lifted off by 40 oz / ″ tape. In order to evaluate cracking of Mo under the CIGS a 1″×1″ sample was cut and CIGS was removed from the corners. Then indium solder was placed over the four corners. Resistance between two diagonal corners relative to the same resistance on the unprocessed Mo coated Upilex-S gives an indication of the severity of cracking. It should be pointed ou...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Diagonal resistance | aaaaa | aaaaa |
| surface temperatures | aaaaa | aaaaa |
| Renewable Energy Laboratories | aaaaa | aaaaa |
Login to View More
Abstract
A composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenidesulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Divisional application of application Ser. No. 11 / 577,777 filed on Apr. 23, 2007, which is a U.S. National Phase filing of PCT International Application No. PCT / US2005 / 037711 filed on Oct. 21, 2005, which claims the priority benefit of U.S. Provisional Application No. 60 / 620,352 filed on Oct. 21, 2004; the entire contents of all of which are hereby incorporated by reference.STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT[0002]This invention was developed under a grant no. AdJ-1-30630-12 from the National Renewable Energy Laboratories.BACKGROUND OF THE INVENTION[0003]The invention is directed to a new process and a new composition of matter. It deals with the formation of selenide, sulfide, and mixed selenide-sulfide on metal or metal coated substrates requiring temperatures in excess of 200° C. Specifically, it solves the problem of crack formation which commonly occurs when copper, indium, gallium, d...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L29/24
CPCC23C14/20C23C26/00C23C14/562
InventorESER, ERTENFIELDS, SHANNON
OwnerESER ERTEN