Method of manufacturing semiconductor device and substrate processing apparatus

a technology of substrate processing and semiconductor devices, which is applied in the direction of coatings, transistors, chemical vapor deposition coatings, etc., can solve the problem of relatively high difficulty level of a process

Inactive Publication Date: 2018-08-30
KOKUSA ELECTRIC CO LTD
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables the adjustment of work functions for both P-type and N-type transistors using a single TiCN film composition, improving process integration and stability by controlling carbon concentration, thus addressing the complexity of integrating metals with different work functions.

Problems solved by technology

If a metal gate electrode having a work function different from that of TiN is required, a difficulty level of a process becomes relatively high due to a problem such as process integration (e.g., a processing error, thermal stability, diffusion stability, etc.) when a metal electrode having a different work function different from that of TiN is used.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing semiconductor device and substrate processing apparatus
  • Method of manufacturing semiconductor device and substrate processing apparatus
  • Method of manufacturing semiconductor device and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0029]A first embodiment of the present invention will be described based on the accompanying drawings below. FIGS. 1 and 2 illustrate a substrate processing apparatus 10 according to an exemplary embodiment of the present invention. The substrate processing apparatus 10 is embodied as an example of a semiconductor manufacturing apparatus to be used to manufacture a semiconductor device (device).

[0030]

[0031]As illustrated in FIGS. 1 and 2, a process furnace 202 includes a heater 207 serving as a heating means (a heating mechanism or a heating system) for heating a wafer 200 which is a substrate. The heater 207 includes a cylindrical insulating member, the top of which is blocked, and a plurality of heater wires, and has a unit structure in which the plurality of heater wires are installed with respect to the insulating member. At an inner side of the heater 207, a reaction tube 203 is installed concentrically with the heater 207 to form a reaction container (process container). The ...

second embodiment

[0107]Next, a second embodiment of the present invention will be described. In the first embodiment, a case in which a TiCN film is formed on the wafer 200 to a predetermined thickness has been described above. Similarly, in the second embodiment, a titanium aluminum carbide film (TiAlC film) may be formed on the wafer 200 to a predetermined thickness, for example, by supplying three types of gases. Here, the differences between the first embodiment and the second embodiment will be described in detail, and a description of parts of the second embodiment that are the same as those of the first embodiment will be appropriately omitted.

[0108]FIG. 6 illustrates gas supply timing in a favorable sequence of forming a TiAlC film by supplying three types of gases onto the wafer 200. In the gas supply timing of FIG. 6, one set including a process of alternately supplying titanium tetrachloride (TiCl4) gas (which is a titanium (Ti)-containing gas) and carbon (C)-containing gas onto the wafer...

third embodiment

[0110]Next, a third embodiment of the present invention will be described. Although a case in which three types of gases are used to form a TiAlC film has been described above in the second embodiment, the present invention is not limited thereto and a TiAlC film may be formed using two types of process gases. FIG. 7 illustrates gas supply timing in a favorable sequence of forming a TiAlC film by supplying two types of gases onto the wafer 200. Here, the differences between the third embodiment and the first and second embodiments and the second embodiment will be described in detail, and a description of parts of the third embodiment that are the same as those of the first and second embodiments will be appropriately omitted.

[0111]In the gas supply timing of FIG. 7, a TiAlC film may be formed on the wafer 200 to a predetermined thickness according to the following sequence. A TiAlC layer containing Ti, Al and C is formed on the wafer 200 by alternately performing (a) the supply of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
work functionaaaaaaaaaa
work functionaaaaaaaaaa
pressureaaaaaaaaaa
Login to View More

Abstract

Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]This application is a divisional of U.S. patent application Ser. No. 14 / 801,984 filed Jul. 17, 2015, based upon and claims the benefit of priority from Japanese Patent Application No. 2013-006965, filed on Jan. 18, 2013, Japanese Patent Application No. 2013-009577, filed on Jan. 22, 2013, and Japanese Patent Application No. 2014-005809, filed on Jan. 16, 2014, in the Japanese Patent Office, and International Application No. PCT / JP2014 / 050751, filed on Jan. 17, 2014, in the WIPO, the whole contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to a method of manufacturing a semiconductor device and a substrate processing apparatus.2. Description of the Related Art[0003]Recently, various metal films have been used as gate electrodes in a gate stack structure. A representative example of a metal gate electrode is titanium nitride (TiN). If a metal g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L21/28H01L21/02C23C16/36C23C16/40C23C16/44C23C16/455H01L49/02H01L27/108H01L21/285C23C16/02C23C16/52H01L29/49H01L29/51H10N97/00
CPCC23C16/45523H01L21/28194C23C16/45578C23C16/4412H01L21/28568H01L21/28556H01L28/40H01L21/02181H01L27/1085C23C16/52H01L21/28562C23C16/45531C23C16/405C23C16/402C23C16/36C23C16/0272H01L21/28088H01L21/28185H01L29/517H01L29/513H01L29/4966C23C16/45561H10B12/03
InventorOGAWA, ARITOHARADA, KAZUHIROKAGA, YUKINAOITATANI, HIDEHARUASHIHARA, HIROSHI
OwnerKOKUSA ELECTRIC CO LTD