The utility model relates to the technical field of
semiconductor power module discloses a
silicon controlled module's heat dissipation base plate and
silicon controlled module, wherein the upper surface of heat dissipation base plate is provided with a plurality of recess, recess sets up between the pressure joint of
pole piece and the outgoing section and the connection department's just below between adjacent pressure joint, the area of recess is greater than or equal to the projection area of connection department on heat dissipation base plate. The heat dissipation base plate can increase the creepage distance between the connection department of
pole piece and the upper surface of heat dissipation base plate, thereby avoiding the
creep phenomenon between the connection department of
pole piece and heat dissipation base plate. At the same time, since the distance between heat dissipation base plate and pole piece and
semiconductor chip is not increased as a whole, the heat dissipation distance of
semiconductor chip will not be increased, so the heat dissipation efficiency of
silicon controlled module will not be affected. The recess can also increase the heat exchange area of heat dissipation base plate and silicon controlled module inside, improve the heat exchange efficiency of silicon controlled module.