Electron beam alignment mark manufacture method and its uses

Abstract

This invention discloses a sort of manufacturing method of the electron beam alignment mark, and it adopts the Ti / Pt metal configuration to be the metal configuration of the alignment mark. It adopts the photo-etching method to process the photo-etching to this underlay material, it forms the electron beam alignment mark in the aluminium-gallium-nitrogen extension layer of the furthest top course of the underlay material. This invention discloses a sort of manufacturing method of the effective bar line by the electron beam alignment mark. A. Adopt the photo-etching method to process the photo-etching to this underlay material, and form the electron beam alignment mark, at last vaporize the marker metal Ti / Pt. B. Adopt the photo-etching method to process the photo-etching to this underlay material, and from the source-drain figure, at last vaporize the source-drain metal. C. Put out a fire to the alloy, and form the good ohm contact. D. Insulate the ion which is in the active area. E. chisel it by the electron beam, achieve the exposal of the bar line. F. Vaporize the bar metal, and form the effective bar line. It availably resolves the problem that the color of the alignment mark metal is changed after the high temperature anneal and it leads that the electron beam exposal device cannot differentiate the alignment mark well and truly by this invention.

Description

technical field [0001] The invention relates to the technical field of manufacturing wide bandgap semiconductor material devices, in particular to a method for manufacturing an electron beam alignment mark and a method for making effective grid lines by using the electron beam alignment mark. Background technique [0002] In the semiconductor field effect transistor structure, the gate length is the most critical factor in determining the frequency of the device. For X-band GaN HEMT devices, in order to obtain a cut-off frequency that is at least 4 times the operating frequency or even higher, the gate length has reached the sub-micron level, and ordinary optical lithography technology is far from meeting our requirements. Require. [0003] Therefore, in the process of fabricating the gate, the direct writing electron beam exposure method with high resolution and overlay precision is adopted, which can produce fine lines of 0.1 to 0.25 microns or even tens of nanometers. ...

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Problems solved by technology

[0013] In view of this, an object of the present invention is to provide a method for making an electron beam alignment mark, so as to solve the problem that the electron beam exposure machine cannot accurately identify the alignment mark due to changes in the shape of the alignment mark metal after high-temperature annealing

[0014] Another object of the present invention is to provide a method of using electron beam alignment marks to make effective grid lines, so as to solve the problem that the alignment marks cannot be accurately identified by the electron beam exposure machine due to changes in the metal morphology of the alignment marks after high temperature annealing

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