Unlock instant, AI-driven research and patent intelligence for your innovation.

Electronic device manufacturing chamber and methods of forming the same

A technology for electronic devices and sliding mechanisms, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increased difficulty

Active Publication Date: 2007-11-14
APPLIED MATERIALS INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the difficulty of manufacturing and transporting such chambers also increases with the size of the chamber based on the chamber's dimensions and / or weight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electronic device manufacturing chamber and methods of forming the same
  • Electronic device manufacturing chamber and methods of forming the same
  • Electronic device manufacturing chamber and methods of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] With regard to the central transfer chamber, fabrication of the central transfer chamber "in situ" from a single aluminum block and disassembly of the central transfer chamber into components have been explored as possible methods for further measuring the transfer chamber. For example, see "LCD Large-Area Substrate Issues, Substrate Enlargement: Where is the Size Limitation?" (LCD Large-Area Substrate Issues, Substrate Enlargement: Where is the Size Limitation?"), Flat Panel Display 2003 (Panel Discussion Will (panel discussion)), in which I.D.Kang of Applied Komatsu Technologies (AKT) thinks:

[0041] If the transfer room grows further, one option would be to have the machining of the individual aluminum blocks done locally in Asia... Another option would be to break down the central transfer room into components. Although machining the transfer chamber from a single block of aluminum guarantees vacuum conditions, it is also possible to form large transfer chambers fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Electronic device manufacturing chamber and methods of forming the same are disclosed. In a first aspect, a first multi-piece chamber is provided. The first multi-piece chamber includes a central piece having a first side and a second side; a first side piece adapted to couple with the first side of the central piece; and a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece and the second side piece form a substantially cylindrical inner chamber region when coupled together. Numerous other aspects are provided.

Description

[0001] This application is a divisional application of the patent application with the application number 200510103895.2 and the title "Electronic Device Manufacturing Room and Forming Method" filed on June 1, 2005. [0002] This application claims priority from US provisional patent applications US 60 / 576902 and US 60 / 587109. US 60 / 576902 filed on June 2, 2004, titled "Semiconductor Device Manufacturing Tool and Method of Use" (Abstract No. 8840 / L), US 60 / 587109 filed on July 12, 2004, titled "Tools for Manufacturing Electronic Devices and Methods of Using the Same" (Abstract No. 8840 / L2). It is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to flat panel display and / or electronic device manufacturing, and more particularly to an electronic device manufacturing chamber and method for forming the same. Background technique [0004] As the size of substrates used in flat panel displays increases, the size of electron...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/67
Inventor S·库利塔W·T·布劳尼干M·伊纳贾瓦
Owner APPLIED MATERIALS INC