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Flash memory with variable error-correcting code mechanism and control method thereof

An error correction code, storage device technology, used in error detection/correction, static memory, instrumentation, etc.

Inactive Publication Date: 2010-11-10
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In practical applications, it is a pity that the reusability of the entire data block will be abandoned because only a very small number of storage units are on the verge of failure.

Method used

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  • Flash memory with variable error-correcting code mechanism and control method thereof
  • Flash memory with variable error-correcting code mechanism and control method thereof
  • Flash memory with variable error-correcting code mechanism and control method thereof

Examples

Experimental program
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Embodiment Construction

[0031] First, if figure 2 As shown, the correction capability of the error correction code to the error of the valid data 42 is related to the data length of the redundant bits 44 . Generally speaking, the longer the data length of the redundant bits 44 is, the stronger the recovery ability of the error correction code is for the valid data 42 . Therefore, the present invention mainly utilizes a variable error correction code mechanism. When the risk of damage to the flash memory is higher than a certain value due to long-term use, the redundant bits of the error correction code can be increased to improve the effectiveness of the error correction code. Data recovery capabilities, thereby extending the life of flash memory. Among them, the risk of damage to the flash memory can be determined by the number of blocks marked as faulty in the flash memory or the average number of writes to the flash memory. At a certain value, the risk of damage to flash memory is relatively hi...

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Abstract

The invention provides a flash memory connected with a mainframe, which comprises the flash memory and a control circuit, wherein the control circuit is provided with an error-correcting code unit, the error-correcting code unit is provided with a first error-correcting code and a second error-correcting code, and the data length of a redundant bit of the second error-correcting code is more than that of the first error-correcting code; when the damage risk of the flash memory is lower than a specific value, the error-correcting code unit processes the data intended to be stored in the flash memory via the mainframe by adopting the first error-correcting code; and when the damage risk of the flash memory is higher than the specific value, the error-correcting code unit processes the data intended to be stored in the flash memory via the mainframe by adopting the second error-correcting code.

Description

technical field [0001] The present invention is a flash storage device with an error correction code mechanism, especially a flash storage device with a variable error correction code mechanism. Background technique [0002] As we all know, flash memory has the advantages of shock resistance, non-volatile, and high storage density. Therefore, a flash memory storage device (flash memory storage device) formed by a flash memory and a control circuit has been widely used. For example, thumb drive, compact flash (referred to as CF card), secure digital storage device (secure digital, referred to as SD card), multimedia card storage device (multi media card, referred to as MMC card) etc. [0003] Generally speaking, Nand-Flash memory on the market can be divided into two types, that is, Single Level Cell Nand-Flash (Single Level Cell Nand-Flash, hereinafter referred to as SLC flash memory) and multi-level cell Nand-Flash memory. Bit storage unit flash memory (Multi Level Cell ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42
CPCG06F11/1072G11C2029/0411
Inventor 徐正煜吴建宏
Owner LITE ON IT
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