Nonvolatile memory device and method for fabricating the same

Abstract

Provided are a nonvolatile memory device and a method for fabricating the same, which can secure the structural stability of a three-dimensional nonvolatile memory device. The nonvolatile memory device includes one or more columnar channel plugs, a plurality of word lines and a plurality of dielectric layers stacked alternately to surround the columnar channel plug, a memory layer disposed between the word line and the columnar channel plug, a plurality of word line connection portions, each of the word line connection portions connecting ends of word lines of a common layer from among the plurality of word lines, and a plurality of word line extension portions extending from the word line connection portions.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0140510 filed on Dec. 31, 2010, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same, and more particularly, to a nonvolatile memory device and a method of manufacturing the same. Background technique [0004] In order to use word lines as metal in 3D flash devices, after forming channel plugs such as in terabit cell array transistors (TCAT), the sacrificial layer is stripped and oxide / nitride / oxide object (ONO) layer and metal. Then, word lines are formed through an isolation process. [0005] Figure 1A is a perspective view of a conventional nonvolatile memory device. Figure 1B yes Figure 1A layout. [0006] see Figure 1A and Figure 1B , a plurality of trench plugs 11 are forme...

AI Technical Summary

Problems solved by technology

[0009] However, the trimmed area is likely to collapse due to thermal stress in the sacrificial layer (nitride layer) lift-off process and subsequent ONO process

Therefore, the word line 12 cannot be correctly formed, thus making it difficult to form the device

Images