Target blasting fixture and target blasting method

A target material and sandblasting technology, which is used in manufacturing tools, abrasive jet machine tools, used abrasive treatment devices, etc. The effect of sandblasting efficiency, ensuring sandblasting quality, and saving the cost of tape
CN104369113BActive Publication Date: 2017-09-15KONFOONG MATERIALS INTERNATIONAL CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2017-09-15

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Abstract

The invention relates to a target material sandblast clamp and a target material sand blasting method, the target material sand blasting clamp comprises a target material chuck, wherein a first groove is arranged on the target material chuck, the first groove is used for accommodating the target material; a cover plate positioned on a sputtering zone of the target material and used for protecting the sputtering zone; the connecting pieces, wherein the number of the connecting pieces is greater than or equal to two, each connecting piece comprises a first end and a second end, the first end is fixed on the target material chuck outside the first groove, the second end is fixed on the cover plate, and each connecting piece keeps a certain distance with the sandblast zone of the target material. When the target material sand blasting clamp is used for sand-blast treatment on the sandblast zone of the target material, the target material sand blasting clamp can protect the sputtering zone of the target material and realize the accurate sand blasting on the sandblast zone of the target material, the position of the formed sandblast zone is accurate, and size and precision of the sandblast zone accord with the requirements.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a target sand blasting fixture and a target sand blasting method. Background technique

[0002] Particles (particles or neutral atoms, molecules) with a certain energy bombard the solid surface, so that the particles on the solid surface gain enough energy to eventually overflow the solid surface. This sputtering and complex particle scattering process is called sputtering. The solid being bombarded is called the target. At present, the sputtering process is often used for thin film deposition, and the material of the thin film to be deposited determines the material of the target. For example, in the manufacture of semiconductor devices, a metal tantalum film needs to be deposited on a silicon substrate, and a tantalum metal target is used to sputter the silicon substrate. Wherein, the sputtering surface of the target is further divided into a sputtering area and a n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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