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A self-extinguishing and self-recovery avalanche photodiode

An avalanche photoelectric and self-recovery technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex and high cost of extinguishing circuit systems

Active Publication Date: 2016-10-05
BEIJING UNIV OF TECH
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  • Description
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AI Technical Summary

Problems solved by technology

The increase of extinguishing circuit makes the whole system complex and costly

Method used

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  • A self-extinguishing and self-recovery avalanche photodiode
  • A self-extinguishing and self-recovery avalanche photodiode
  • A self-extinguishing and self-recovery avalanche photodiode

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specific Embodiment

[0023] Concrete embodiment preparation process and method are as follows:

[0024] 1. If Figure 5-1 As shown, the p-type layer 105 is formed by in-situ doping on the front surface of the high-resistance silicon substrate with a resistivity of 1000 Ω·cm or more by metal-organic vapor deposition, and the doping concentration is 5×10 17 cm -3 ;

[0025] 2. Form the charge multiplication region 104 on the front side by metal-organic vapor deposition, without doping, with a thickness in the range of 0.2 to 1 micron;

[0026] 3. Form the second n-type layer 102 on the front side by metal-organic vapor deposition, with a doping concentration of 5×10 18 cm -3 ;

[0027] 4. Form an electron potential well layer 103 on the front side by metal-organic vapor deposition, with a doping concentration of 1×10 18 cm -3 ;

[0028] 5. Form the first n-type layer 101 on the front side by metal-organic vapor deposition, with a doping concentration of 5×10 18 cm -3 .

[0029] 6. Deposit...

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Abstract

The invention provides an avalanche photodiode with self-extinguishing self-recovery functions, and relates to the field of semiconductor photoelectric devices. The avalanche photodiode comprises a first n-type layer (101), a second n-type layer (102), a charge multiplication region (104), a p-type layer (105), and a substrate (106) stacked longitudinally in sequence. The avalanche photodiode is characterized in that an electronic potential well layer (103) is between the first n-type layer (101) and the second n-type layer (102). An electronic potential well can be formed by two methods, one is that the electronic potential well layer (103) uses a p-type material, and the second method is that the electronic potential well layer (103) uses the first n-type layer (101) or the second n-type layer (102) to dope with an n+ type material in higher than doubled density, and after nn+ junction is formed, an electronic potential well is formed in the electronic potential well layer (103) The self-extinguishing self-recovery avalanche photodiode structure is different from a conventional structure, and is characterized by automatic extinguishing and then automatic recovery.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an avalanche photodiode capable of detecting weak light. Background technique [0002] Single-photon detection technology has broad application prospects in quantum communication, sensing and remote sensing, high-energy physics, 3D imaging, military and medicine, so it has attracted much attention. Photon counter devices for single-photon detection are mainly divided into two structures: a photomultiplier tube (PMT) based on vacuum tube technology and an avalanche photodiode (Avalanche Photon Diode, APD) based on semiconductor technology. The photomultiplier tube has the advantages of high gain, large test area, fast calculation rate, and high time resolution. However, its quantum efficiency in the visible light range is very low, the volume is large, it is difficult to integrate, it works at high voltage (200-600V), and it is easy to break , expensive, severe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107
CPCH01L31/107
Inventor 郭霞刘巧莉李冲董建刘白
Owner BEIJING UNIV OF TECH
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