A self-extinguishing self-recovery avalanche photodiode
An avalanche photoelectric and self-recovery technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high cost and complicated extinguishing circuit system
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[0027] As shown in Figure 5, its preparation process and method are as follows:
[0028] 1. Phosphorus is implanted on the front surface of a high-resistance silicon substrate with a resistivity of 1000Ω·cm or more to form a hole potential well formation layer 105 with a doping concentration of 1×10 18 cm -3 ;
[0029] 2. Implant boron on the front side of the high-resistance silicon substrate to form a p-type layer 104 with a doping concentration of 5×10 17 cm -3 ;
[0030] 3. Phosphorus is implanted into the front side of the silicon substrate, and an n-type layer 102 is formed on the upper surface of the sample, with a doping concentration of 5×10 18 cm -3 . At the same time, due to the difference in implantation depth between the n-type layer 102 and the p-type layer 104 formed by ion implantation, there will be a layer of unintentionally doped region 103 between them, which is a charge multiplication region;
[0031] 4. Annealing, activate the implanted impurity io...
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