Avalanche photodiode with self-extinguishing self-recovery function
An avalanche photoelectric and self-recovery technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of complex and high cost of extinguishing circuit systems
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[0023] Concrete embodiment preparation process and method are as follows:
[0024] 1. If Figure 5-1 As shown, the p-type layer 105 is formed by in-situ doping on the front side of the high-resistance silicon substrate with a resistivity of 1000 Ω·cm or more by metal-organic vapor deposition, and the doping concentration is 5×10 17 cm -3 ;
[0025] 2. Form the charge multiplication region 104 on the front side by metal-organic vapor deposition, without doping, with a thickness in the range of 0.2 to 1 micron;
[0026] 3. Form the second n-type layer 102 on the front side by metal-organic vapor deposition, with a doping concentration of 5×10 18 cm -3 ;
[0027] 4. Form an electron potential well layer 103 on the front side by metal-organic vapor deposition, with a doping concentration of 1×10 18 cm -3 ;
[0028] 5. Form the first n-type layer 101 on the front side by metal-organic vapor deposition, with a doping concentration of 5×10 18 cm -3 .
[0029] 6. Deposit si...
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