Electrostatic chuck and method for adsorbing wafer

An electrostatic chuck and electrostatic attraction technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of damaging the quality of wafer products and the life of electrostatic chucks, unable to maintain back pressure, and insufficient suction, so as to avoid jumping. Sheet problem, reduce material friction, improve product quality effect

Inactive Publication Date: 2015-11-25
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The suction force in the middle part is not enough to maintain the back pressure for heat exchange, and even cause chip jumping; the edge part is in uneven contact with the insulating material of the electrostatic chuck, causing friction between the back of the wafer and the surface material of the electrostatic chuck, which damages the quality of wafer products and static electricity. The life of the sucker

Method used

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  • Electrostatic chuck and method for adsorbing wafer
  • Electrostatic chuck and method for adsorbing wafer
  • Electrostatic chuck and method for adsorbing wafer

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Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0035] The following is attached Figure 1-4c The electrostatic chuck capable of setting the electrostatic attraction distribution of the present invention will be further described in detail with specific embodiments. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0036] see figure 1, in this embodiment, the top of the electrostatic chuck has an insulating material, and two or more pairs of positive...

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Abstract

The invention provides an electrostatic chuck and a method for adsorbing a wafer. A plurality of pairs of positive electrodes and negative electrodes are arranged in an insulating layer of the top of the electrostatic chuck. A detection part is arranged to detect the bending position and bending degree of the wafer, and sends a detection result to a control part, and the control part controls voltage distribution between each pair of positive electrode and negative electrode according to the detection result, so that the electrostatic chuck generates electrostatic attraction distribution matching with the bending position and the bending degree of the wafer, the whole wafer is contacted with an insulating material uniformly, the friction between the back of the wafer and the surface material of the electrostatic chuck is reduced, the wafer is prevented to skip, the wafer product quality is improved, and the service life of the electrostatic chuck is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electrostatic chuck capable of setting the distribution of electrostatic attraction force and a method for absorbing a wafer. Background technique [0002] In the field of semiconductor manufacturing, electrostatic chucks are used to carry wafers in the process through the attraction of opposite charges, and are widely used in processes such as lithography, ion implantation, etching, and thin films. [0003] figure 1 It is a schematic diagram of the electrostatic chuck, as shown in the figure: a group of DC electrodes are embedded in the insulating material of the electrostatic chuck to connect to the DC power supply, so that the voltages of the positive and negative electrodes are equal and opposite in polarity (for example, input 500V Voltage, the positive electrode voltage is +250V, the negative electrode voltage is -250V), the surface of the insulating material wil...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/67
CPCH01L21/6833H01L21/67
Inventor胡彬彬韩晓刚孔祥涛
OwnerSHANGHAI HUALI MICROELECTRONICS CORP