Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Exposure measurement device and measurement platform thereof

A technology of exposure amount and measurement, which is applied in photolithographic exposure devices, microlithography exposure equipment, optics, etc., can solve the problems of glass 10 deformation, affecting the accuracy of CD and OL measurement data, etc., to ensure flatness , Strengthen the effect of flattening and improve accuracy

Active Publication Date: 2016-05-04
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The way that the industry generally adopts now is to adopt the way that 4-6 small platforms 12 are spliced ​​into a large platform, and there is no mechanism for connection and height relative adjustment between several small platforms 12, because the platforms 12 are spliced ​​and the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure measurement device and measurement platform thereof
  • Exposure measurement device and measurement platform thereof
  • Exposure measurement device and measurement platform thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0024] In the figures, structurally similar units are denoted by the same reference numerals.

[0025] refer to figure 2 and image 3 , figure 2 is a schematic cross-sectional view of an exposure measurement device in a preferred embodiment of the present invention, image 3 It is a specific cross-sectional schematic diagram of the measurement platform of the preferred embodiment of the present invention.

[0026] Such as figure 2 As shown, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Preferred embodiments of the invention provide an exposure measurement device and a measurement platform thereof for measuring a critical dimension and coverage data of an exposure pattern on a measurement substrate. The exposure precision measurement device comprises an integral upper plate, an integral lower plate and a plurality of height adjustment mechanisms, wherein the integral upper plate is provided with an upper surface used for bearing the substrate; the integral lower plate is arranged under the integral upper plate; the height adjustment mechanisms are arranged between the integral upper plate and the integral lower plate and are supported between the integral upper plate and the integral lower plate; the height adjustment mechanisms are respectively subjected to fine tuning, so that the upper surface of the integral upper plate is flat.

Description

【Technical field】 [0001] The present invention relates to an exposure measurement device and its measurement platform, in particular to an exposure measurement device and its measurement platform for measuring the critical dimension and coverage data of an exposure pattern on a substrate. 【Background technique】 [0002] Photolithography is one of the methods used for patterning in semiconductor or liquid crystal display manufacturing technology, in which the pattern is transferred to the photoresist of the wafer or glass through a photomask, so the photomask is the key to the photolithography process. Common tools. In the process of photolithography, the critical dimension (Critical Dimension, also called "characteristic line width") of the wafer formed by photolithography patterning is a key process parameter in the photolithography process, which is mainly determined by the CD of the photomask. In the photolithography process, by setting the exposure energy in the exposur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70441G03F7/70625
Inventor 祖伟
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com