Self-aligned two-dimensional crystal material field-effect semiconductor device and its preparation method

Abstract

A self-aligned two-dimensional crystal material field effect semiconductor device and a preparation method thereof belong to the technical field of semiconductor devices. The semiconductor device of the present invention includes a gate electrode region, a source electrode region, and a drain electrode region, and is characterized in that it also includes a two-dimensional crystal material layer, the two-dimensional crystal material layer is connected to the source electrode and the drain electrode, and straddles the gate electrode region Partially, there is a gate dielectric oxide layer between the two-dimensional crystal material layer and the gate electrode region below it. Using the self-alignment process of the invention can automatically realize the alignment of the device gate electrode and the source and drain electrodes, thereby greatly reducing the covering capacitance between the gate and the source and drain electrodes, which is of great significance for improving the operating frequency of the device. On the other hand, the self-aligned device structure of the gate and the source and drain electrodes greatly reduces the parasitic resistance of the channel layer between the gate electrode and the source electrode and between the gate electrode and the drain electrode, that is, the two-dimensional crystal material, which is also beneficial. It is beneficial to increase the operating frequency of the device.

Description

technical field [0001] The invention relates to a self-aligned two-dimensional crystal material-based field-effect semiconductor device structure and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Driven by Moore's Law, the size of semiconductor devices based on single crystal silicon materials is getting smaller and smaller, the density of integrated circuits is getting higher and higher, power consumption is getting lower and lower, the performance of chips is getting stronger, and the cost is getting lower and higher. Low. However, with the gradual reduction of the critical dimensions of the semiconductor process, the semiconductor process is getting closer and closer to the physical limit of the semiconductor, and it is difficult to continue shrinking. [0003] Moore's Law is coming to an end, but the pace of information technology advancement will not slow down. Researchers from all over the world...

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