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72results about How to "Maintain optical properties" patented technology

Gold nanoparticle triangular plate preparing method and method for preparing gold nanoparticle discs and gold nanoparticle hexagonal pieces on basis of gold nanoparticle triangular plate preparing method

The invention provides a gold nanoparticle triangular plate preparing method and a method for preparing gold nanoparticle discs and gold nanoparticle hexagonal pieces on the basis of the gold nanoparticle triangular plate preparing method, relates to the technical field of gold nanoparticle preparing, and aims at providing the method which is easy and convenient to operate, high in repeatability and efficiency and is used for preparing gold nanoparticle triangular plates, gold nanoparticle discs and gold nanoparticle hexagonal pieces. The gold nanoparticle triangular plate preparing method includes the steps of preparing a gold nanoparticle seed solution through a sodium citrate aqueous solution, a tetrachloroauric acid aqueous solution and a sodium borohydride aqueous solution, preparing a gold nanoparticle triangular plate solution through the preapraed seed solution, a cetyl trimethyl ammonium bromide aqueous solution, a tetrachloroauric acid aqueous solution, a potassium iodide or sodium iodide aqueous solution, a sodium hydroxide aqueous solution and a ascorbic acid aqueous solution, and obtaining gold nanoparticle triangular plates after the liquid supermatant is abandoned. The method is easy and convenient to operate and high in repeatability and controllability, the prepared gold nanoparticle plates are unified in size, gold nanoparticle plates of different types and sizes can be synthesized, and the purity reaches 95% or higher.
Owner:NANOSEEDZ

Self-aligned two-dimensional crystal material field-effect semiconductor device and preparation method thereof

The invention provides a self-aligned two-dimensional crystal material field-effect semiconductor device and a preparation method thereof, and belongs to the technical field of semiconductor devices. The semiconductor device provided by the invention comprises a gate electrode region, a source electrode region, a drain electrode region and a two-dimensional crystal material layer, wherein the two-dimensional crystal material layer is connected with a source electrode and a drain electrode, and strides the local part of the gate electrode region; and a gate dielectric oxidation layer is arranged between the two-dimensional crystal material layer and the gate electrode region at the lower part of the two-dimensional crystal material layer. By a self-aligned technology provided by the invention, position alignment of the gate electrode and the source electrode and the drain electrode of the device can be automatically achieved, so that, on one hand, the coverage capacitance of the gate electrode, the source electrode and the drain electrode is greatly reduced, which has important significance for improvement of the working frequency of the device; and on the other hand, the self-aligned device structure with the gate electrode, the source electrode and the drain electrode greatly reduces channel layers, namely the parasitic resistance of the two-dimensional crystal material, between the gate electrode and the source electrode and between the gate electrode and the drain electrode, which is also beneficial to improvement of the working frequency of the device.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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