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Semiconductor device based on epitaxial layer, manufacturing method thereof, and electronic device including same

A semiconductor and device technology, applied in the field of electronic equipment, can solve problems such as the difficulty in forming high-quality high-mobility semiconductor materials, and achieve the effects of reducing overall strain energy, avoiding defects, and improving mechanical and electrical properties

Active Publication Date: 2019-07-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to form high-quality high-mobility semiconductor materials

Method used

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  • Semiconductor device based on epitaxial layer, manufacturing method thereof, and electronic device including same
  • Semiconductor device based on epitaxial layer, manufacturing method thereof, and electronic device including same
  • Semiconductor device based on epitaxial layer, manufacturing method thereof, and electronic device including same

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Embodiment Construction

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

The invention discloses a semiconductor device based on an epitaxial layer and a manufacturing method thereof and electronic equipment comprising the semiconductor device. According to the embodiments, the semiconductor device comprises a substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are spaced from the substrate and are fin-shaped; at least one of the first semiconductor layer and the second semiconductor layer extends along a bent longitudinal extension direction; the third semiconductor layer is formed by at least partially surrounding the periphery of the first semiconductor layer; and the fourth semiconductor layer is formed by at least partially surrounding the periphery of the second semiconductor layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device with a high-quality epitaxial layer, a manufacturing method thereof, and an electronic device including the same. Background technique [0002] With the development of semiconductor devices, it is expected to use semiconductor materials with higher mobility than silicon (Si) to fabricate high-performance semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs). However, it is difficult to form high-quality high-mobility semiconductor materials. Contents of the invention [0003] It is an object of the present disclosure, at least in part, to provide a semiconductor device having a high-quality epitaxial layer, a method of manufacturing the same, and an electronic device including the same. [0004] According to one aspect of the present disclosure, there is provided a semiconductor device, comprising: a su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/0684H01L29/66795H01L29/785
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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