Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure and a manufacturing method thereof are disclosed. The method comprises the steps of providing a substrate; forming a tungsten layer on the substrate; forming a metal interconnect layer on the surface of the tungsten layer; etching the tungsten layer and the metal interconnect layer to form at least one metal interconnect line; covering the metal interconnect line and the substrate with a second insulating layer; and forming a second metal interconnect structure within the second insulating layer, the second metal interconnect structure being located above the metal interconnect line. The thin tungsten layer is first formed and the metal interconnect layer is then formed to constitute the metal interconnect line; and the tungsten layer serves as a part of the material of the metal interconnect line, and when a device is turned on, the tungsten layer plays a role in current shunting and the phenomenon of metal migration failure can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the development of integrated circuit technology, the feature size of integrated circuits is continuously reduced, which puts forward higher requirements for metal interconnection lines that realize electrical connections between devices. [0003] refer to figure 1 , shows a schematic structural diagram of the interconnection structure in the prior art back-end process. The interconnection structure includes: a first metal interconnection structure 110, used to realize the electrical connection between devices of different layers; a metal interconnection line 120 connected to the first metal interconnection structure 110, used to realize the same layer Electrical connections between devices. Due to the better conductivity of copper, compared with pure aluminum, the use of AlCu alloy a...

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