A method for epitaxially growing iron nitride thin films with multiple phase structures on mgo(111) substrates

An epitaxial growth, epitaxial thin film technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the limitation, continuous control of thin film has not been well solved, complex hexagonal structure and metastable characteristics, etc. problems, to achieve the effect of expanding the application space

Inactive Publication Date: 2019-05-14
SHIJIAZHUANG TIEDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But ε-Fe 3-x The relatively complex hexagonal structure and metastable properties of N lead to the ε-Fe 3-x The epitaxial growth of N films, and the continuous regulation of the nitrogen content (i.e., magnetic properties) in the films have not been well resolved.
Therefore, the literature on ε-Fe 3-x There are relatively few studies on N thin films, and at the same time, the ε-Fe 3-x Insufficient or blank basic experimental parameters such as N magnetic anisotropy, carrier concentration, electron mobility, anisotropic magnetoresistance, and even spin polarizability limit the ε-Fe 3-x Applications of N in Spintronic Devices

Method used

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  • A method for epitaxially growing iron nitride thin films with multiple phase structures on mgo(111) substrates
  • A method for epitaxially growing iron nitride thin films with multiple phase structures on mgo(111) substrates
  • A method for epitaxially growing iron nitride thin films with multiple phase structures on mgo(111) substrates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Preparation of α-Fe and γ'-Fe on MgO(111) Substrates 4 An epitaxial thin film with N two-phase structure coexisting, comprising the following steps:

[0031] (1) Fix the Fe target with a purity of 99.99% from Hefei Kejing Co., Ltd. on the strong magnetic target in the sputtering chamber;

[0032] (2) Fix the single crystal MgO(111) substrate and glass with a size of 5×5×0.5mm on the substrate holder at the same time, put them into the sputtering chamber, and vacuumize;

[0033] (3) The vacuum degree of the sputtering chamber reaches 1.2×10 -4 Pa, heat the substrate support up to 350°C;

[0034] (4) Passing Ar and N 2 The mixed gas, wherein, the Ar gas flow is 49sccm, N 2 The gas flow rate is 1 sccm, and the air pressure in the sputtering chamber is stabilized by adjusting the bypass valve of the molecular pump;

[0035] (5) The air pressure in the sputtering chamber is stabilized at 0.2Pa, the sputtering current is adjusted to 0.08mA, the pre-sputtering is 5 minute...

Embodiment 2

[0039] Preparation of γ'-Fe on MgO(111) Substrate 4 N epitaxial thin film, comprises the steps:

[0040] (1) Fix the Fe target with a purity of 99.99% from Hefei Kejing Co., Ltd. on the strong magnetic target in the sputtering chamber;

[0041] (2) Fix the single crystal MgO(111) substrate and glass with a size of 5×5×0.5mm on the substrate holder at the same time, put them into the sputtering chamber, and vacuumize;

[0042] (3) The vacuum degree of the sputtering chamber reaches 1.2×10 -4 Pa, heat the substrate support up to 350°C;

[0043] (4) Passing Ar and N 2 The mixed gas, wherein, the Ar gas flow is 46sccm, N 2 The gas flow rate is 4 sccm, and the air pressure in the sputtering chamber is stabilized by adjusting the side pumping valve of the molecular pump;

[0044] (5) The air pressure in the sputtering chamber is stabilized at 0.2Pa, the sputtering current is adjusted to 0.08mA, the pre-sputtering is 5 minutes, and the growth sputtering is 30 minutes;

[0045] ...

Embodiment 3

[0048] Preparation of γ'-Fe on MgO(111) Substrate 4 N and ε-Fe 3-x An epitaxial thin film with N(0≤x<1) two-phase structure coexisting, including the following steps:

[0049] (1) Fix the Fe target with a purity of 99.99% from Hefei Kejing Co., Ltd. on the strong magnetic target in the sputtering chamber;

[0050] (2) Fix the single crystal MgO(111) substrate and glass with a size of 5×5×0.5mm on the substrate holder at the same time, put them into the sputtering chamber, and vacuumize;

[0051] (3) The vacuum degree of the sputtering chamber reaches 1.2×10 -4 Pa, heat the substrate support up to 350°C;

[0052] (4) Passing Ar and N 2 The mixed gas, wherein, the Ar gas flow is 45sccm, N 2 The gas flow rate is 5 sccm, and the air pressure in the sputtering chamber is stabilized by adjusting the side pumping valve of the molecular pump;

[0053] (5) The air pressure in the sputtering chamber is stable at 0.2Pa, adjust the sputtering current to 0.08mA, pre-sputter for 5 min...

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Abstract

The invention discloses a method for epitaxially growing iron nitride films with multiple phase structures on a MgO(111) substrate, relates to the technical field of thin film materials, and comprises the following steps: fixing an Fe target on a strong magnetic target in a sputtering chamber; Fix the single crystal MgO substrate and glass on the substrate holder at the same time, put it into the sputtering chamber, and vacuumize; wait until the vacuum degree of the sputtering chamber reaches 2.0×10 ‑4 After the Pa is below, the substrate support is heated; Ar and N are passed through 2 After adjusting the gas flow into the chamber, adjust the side pumping valve of the molecular pump to stabilize the air pressure in the sputtering chamber; the air pressure in the sputtering chamber is stabilized at 0.2Pa, adjust the sputtering current to 0.08mA, and Sputtering for 5 minutes, sputtering for 30 minutes; after sputtering, stop ventilation and in-situ annealing for 60 minutes, evacuate until naturally cooled to 80°C, turn off the vacuum pump, and obtain an iron nitride epitaxial film, which realizes α-Fe(N), γ′ ‑Fe 4 N, ε‑Fe 3‑x N(0≤x<1), ζ‑Fe 2 The epitaxial growth of N, γ″-FeN and γ″′-FeN films and the precise regulation of nitrogen content have laid the foundation for the application of iron nitride in spintronic devices.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and in particular relates to a method for epitaxially growing iron nitride thin films with multiple phase structures. Background technique [0002] Iron nitride is a typical interstitial alloy. N atoms with small diameters orderly occupy the interstitial sites formed by Fe atoms and introduce chemical stress in the Fe lattice. Under stress-induced changes in nitrogen content and temperature, iron nitride exhibits a rich phase structure, including α-Fe(N), α′-Fe 8 N, α″-Fe 16 N 2 , γ′-Fe 4 N, ε-Fe 3-x N, ζ-Fe 2 N, γ″-FeN and γ″′-FeN, etc., and various magnetic structures, including ferromagnetic, paramagnetic and antiferromagnetic. figure 1 The phase structure that iron nitride can exist stably at normal temperature and pressure is given in , in the figure N:Fe is less than 0.5 α″-Fe 16 N 2 , γ′-Fe 4 N and ε-Fe 3-x N(0≤x<1) has high saturation magnetization and low coerciv...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/06
CPCC23C14/0641C23C14/35C23C14/5806
Inventor李国科元利勇刘迪迪侯登录马丽
OwnerSHIJIAZHUANG TIEDAO UNIV