Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Acne-mark-removing repairing facial mask and preparation method thereofv

A facial mask and anti-acne technology, applied in skin care preparations, pharmaceutical formulas, cosmetic preparations, etc., can solve problems such as acne marks on the face, dull skin, etc., to speed up the process of damage repair and repair the skin. , the effect is obvious

Inactive Publication Date: 2018-06-19
广州蜜妆生物科技有限公司
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of acne scars or dull skin left on the face after acne is eliminated, the present invention provides an acne scar repairing facial mask, which uses plant active ingredients to gently remove acne scars, repair the skin, and make the skin become bright and vibrant

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acne-mark-removing repairing facial mask and preparation method thereofv
  • Acne-mark-removing repairing facial mask and preparation method thereofv

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] An essence for removing acne prints and repairing facial masks, comprising the following components in terms of mass percentages: 1.5% centella asiatica extract, 1% white willow bark extract, 1% scutellaria baicalensis root extract, and 0.1% dipotassium glycyrrhizinate , xanthan gum 0.25%, carboxymethyl chitosan 0.1%, small molecule hyaluronic acid 0.1%, hydroxyethyl urea 3%, butylene glycol 5%, phenoxyethanol 0.25%, hexylhexylglycerin 0.025% , 0.05% sodium citrate, 0.02% citric acid, 0.10% methylparaben, 0.005% essence, and the balance is deionized water.

[0022] A preparation method of acne mark repairing facial mask paste essence, comprising the following steps:

[0023] (1) Put deionized water, xanthan gum, butylene glycol, citric acid, sodium citrate, carboxymethyl chitosan, and methylparaben into a stirring pot, heat to 80-85°C, and keep warm for 15 minute;

[0024] (2) Add hydroxyethyl urea and small molecule hyaluronic acid into the stirring pot, start stirri...

Embodiment 2～6

[0028] Repeat the preparation method of Example 1 according to the content of Centella asiatica extract, white willow bark extract, Scutellaria baicalensis root extract, dipotassium glycyrrhizinate specified in the following table 1, and the types and contents of other unlisted components are all the same as Example 1 is the same.

[0029] Table 1 embodiment 2 to embodiment 6 part raw material content table

[0030]

[0031]

[0032] After testing, the samples prepared in Examples 1-6 fully complied with the indicators in the "Safety Technical Specifications for Cosmetics (2015 Edition)" promulgated by the state.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an acne-mark-removing repairing facial mask comprising the following components by weight: 0.3-2.5% of Centella asiatica extract, 0.3-2.5% of white willow bark extract, 0.3-2% of scutellaria baicalensis root extract, 0.05-0.2% of dipotassium glycyrrhizinate and 92.8%-99.05% of a matrix. Through organic screening of a plurality of plant active ingredients and addition of a certain proportion of humectants and small molecular active ingredients, a good moisturizing barrier film can be formed, the acne-mark-removing repairing facial mask has the advantages of sustained release absorption, lasting effect on the skin, refreshing, acne mark removal and skin repairing, and can make the skin bright, translucent and energetic.

Description

technical field [0001] The invention relates to the technical field of facial masks, in particular to a facial mask for removing acne marks and repairing it and a preparation method thereof. Background technique [0002] Most people in adolescence or high-paced work, due to strong endocrine or endocrine disorders, irregular life, various pressures, etc., the skin is prone to oily shine, which leads to blockage of hair follicles, acne bacteria reproduction, and eventually acne and acne ;Although we can remove acne by using external medicine ointment for acne removal; but after acne is eliminated, acne marks or dull skin will be left to a certain extent, so it is very important to develop a mask that is specially used to eliminate acne marks and repair skin. There is a market. Contents of the invention [0003] In order to solve the problem of acne scars left on the face or dull skin after acne is eliminated, the present invention provides an acne scar repairing facial mask...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): A61K8/9789A61K8/63A61Q19/02
CPCA61K8/97A61K8/63A61Q19/008A61Q19/02
Inventor 将光芒梁伟绍
Owner 广州蜜妆生物科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com