Mos tube self-test circuit and method for three-phase DC brushless motor

A brushless DC motor and MOS tube technology, applied in the field of motors, can solve the problems of time-consuming detection and low safety, and achieve the effects of low cost, improved safety performance, and shortened self-inspection time.

Active Publication Date: 2021-06-04
HUIZHOU TOPBAND ELECTRICAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a MOS tube self-inspection circuit and method for a three-phase DC brushless motor, aiming at solving the problems of low security and time-consuming detection of the existing MOS tube self-inspection scheme for a DC brushless motor

Method used

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  • Mos tube self-test circuit and method for three-phase DC brushless motor
  • Mos tube self-test circuit and method for three-phase DC brushless motor

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Embodiment A

[0051] How to judge whether the MOS transistors Q1, Q3, and Q5 are short-circuited is described in detail below.

[0052] In the embodiment of the present invention, in a specific implementation of the reference voltage unit, the MCU as the control unit respectively makes the output terminal volt_ceter of the reference voltage unit output the reference voltage through the resistors R4 and R6 on the reference voltage unit, specifically The implementation is as follows:

[0053] The MCU program controls the I / O pin connected to the resistor R4, and connects the resistor R4 to the pull-up resistor inside the MCU; the MCU program controls the I / O pin connected to the resistor R6, connects the resistor R6 to GND, and the resistor R4, The other end of R6 is a common terminal, and is connected to the output terminal volt_ceter of the reference voltage unit, so that the output terminal volt_ceter of the reference voltage unit forms a reference voltage, for example, the reference volta...

Embodiment B

[0061] How to determine whether the MOS transistors Q2, Q4, and Q6 are short-circuited will be described in detail below.

[0062] In the embodiment of the present invention, the MCU uses the resistors R4 and R6 on the reference voltage unit to make the volt_ceter output the reference voltage, and the way to detect whether Q2 is short-circuited is as follows:

[0063] The MCU program controls the I / O pin connected to the resistor R4, and connects the resistor R4 to GND; the MCU program controls the I / O pin connected to the resistor R6, and connects the resistor R6 to the pull-up resistor inside the MCU; make the volt_ceter The voltage is about 0.095V (to simplify the analysis, 0.095V is only the voltage division result of resistor R4 and resistor R6, and other voltage division networks are ignored).

[0064] If both Q1 and Q2 MOS tubes are good, then the voltage at the phase line phase_U is about 1.3V after 15V is divided by the bootstrap diode D1, the voltage dividing resisto...

Embodiment C

[0075] The following details how to detect whether Q1, Q3, and Q5 are open.

[0076] In the embodiment of the present invention, if a short circuit is detected after the MOS tube short circuit detection process is completed, an error prompt will be issued, indicating that there is a problem with the circuit, and the open circuit detection will not be performed further down. If no short circuit is detected, the MOS tube will be further detected. Whether the tube is open.

[0077] Here we still take Q1 as an example, and the details are as follows:

[0078] In a specific implementation of the reference voltage unit, the MCU makes the output terminal volt_ceter of the reference voltage unit output the reference voltage through the resistors R4 and R6 on the reference voltage unit respectively.

[0079] The MCU makes the volt_ceter output the reference voltage through the resistor R4 and the resistor R6. In detail, the MCU program controls the I / O pin connected to the resistor R...

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Abstract

The present invention is applicable to the motor field, and provides a MOS tube self-test circuit and method for a three-phase DC brushless motor. The circuit includes: a control unit, and a drive circuit with three-phase drive bridge arms, and Contains a bootstrap circuit connected to the MOS tube of the phase drive bridge arm, the bootstrap circuit at least includes a bootstrap diode, a bootstrap capacitor, and a driver chip; each phase drive bridge arm also includes a self-test in parallel with the bootstrap capacitor Use a voltage dividing resistor and a sampling resistor, and the sampling resistor is connected to the phase line of the motor driving the bridge arm of the phase, and form a voltage dividing circuit for self-test with the bootstrap diode and the voltage dividing resistor for self-test to perform self-test on the MOS tube. Through the circuit structure provided by the present invention, self-inspection is performed on the opening and short circuit of the MOS tube switch, which greatly shortens the time for self-inspection, and also avoids damage to the MOS tube caused by the self-inspection method of detecting large currents, and the safety performance is greatly improved. At the same time, the circuit cost is also greatly reduced.

Description

technical field [0001] The invention belongs to the field of motors, in particular to a MOS tube self-checking circuit and method for a three-phase DC brushless motor. Background technique [0002] In the driving circuit of brushless DC motor BLDCM (Brushless Direct Current Motor), MOS tube is a relatively fragile device, which often causes short circuit due to various reasons, and then damages the control board, and in severe cases, it will smoke or catch fire, or be damaged Power supply or battery pack; the production line will have defects such as tin connection during the production process. When the product is powered on, the MOS tube may be damaged, resulting in an open circuit, and the control board may run without phase. Therefore, it is necessary to Conduct open and short circuit self-test on MOS tube. [0003] The traditional MOS tube self-inspection scheme is to detect the MOS tubes one by one. In this self-inspection scheme, generally in a bridge arm of the driv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/52G01R31/54
CPCG01R31/50
Inventor 李陆君
Owner HUIZHOU TOPBAND ELECTRICAL TECH CO LTD
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