Insulated gate bipolar transistor and manufacturing method thereof

Abstract

The invention relates to an IGBT and a manufacturing method thereof. The IGBT includes: a substrate; a base of the first conductivity type; a groove opened on the surface of the base of the first conductivity type and extending downward; a buffer zone of the first conductivity type arranged in the base of the first conductivity type; On both sides of the groove; the collector doped region is located in the buffer zone of the first conductivity type and on both sides of the trench; the base of the second conductivity type; the gate oxide layer is located on the inner surface of the trench; the polysilicon gate is located on the gate oxide The inner side of the layer is filled in the bottom and part of the sidewall of the trench; the emitter doped region is located in the second conductivity type base and the lower part of the trench between the polysilicon gates; the conductive plug is from the top of the trench to the bottom extending, penetrating through the emitter doped region and contacting the base of the second conductivity type; the insulating oxide layer is filled in the trench, between the conductive plug and the polysilicon gate. The collecting electrode of the IGBT of the present invention is on the top, which is more convenient to lead out, and can be compatible with the traditional isolation structure technology.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) structure, and also to a manufacturing method of the insulated gate bipolar transistor. Background technique [0002] The traditional IGBT has a vertical structure with the collector underneath, but if it is to be applied to an integrated process, how to lead it from the substrate to the front is a difficult problem. Contents of the invention [0003] Based on this, it is necessary to provide an IGBT with a novel structure and a manufacturing method thereof. [0004] An insulated gate bipolar transistor, comprising: a substrate; a base of a first conductivity type disposed on the substrate; at least one first trench opened on the surface of the base of the first conductivity type and downward Extending; the buffer zone of the first conductivity type, having the first conductivity t...

AI Technical Summary

Problems solved by technology

[0002] The traditional IGBT has a vertical structure with the collector underneath, but if it is to be applied to an integrated process, how to lead it from the substrate to the front is a difficult problem

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