Valve device, processing device, and control method

Abstract

The present invention provides a valve device, a processing device, and a control method that shorten the stop period of the processing device during cleaning. The valve device includes a plurality of valves, a housing, a thermal diffusion unit, a heating unit, a supply unit, and a control unit. The plurality of valves controls flow of the plurality of processing gases supplied to the processing container. The housing forms a plurality of first channels through which the process gas flows. The thermal diffusion part covers the case and diffuses the heat of the case. The heating unit covers the housing covered by the thermal diffusion unit, and heats the housing through the thermal diffusion unit. The supply unit supplies the refrigerant to the second flow path formed between the case and the thermal diffusion unit. The control unit controls the heating unit so as to heat the housing to the first temperature when a predetermined process is performed on the object to be processed in the processing container. In addition, the control unit stops the heating of the casing by the heating unit before starting cleaning of the processing container, and controls the supply unit so as to supply the refrigerant to the second flow path.

Description

technical field [0001] Various aspects and embodiments of the present disclosure relate to a valve device, a processing device, and a control method. Background technique [0002] As a method of forming a film on a semiconductor wafer (hereinafter referred to as wafer), CVD (Chemical Vapor Deposition) method, ALD (Atomic Layer Deposition, Atomic Layer Deposition) method, etc. are known. In the CVD method and the ALD method, a gas is used as a raw material of a film to be laminated, and some raw materials are solid or liquid at normal temperature. Such raw materials are vaporized by heating and supplied to the wafer. In this case, piping, valves, and the like included in the supply path of the vaporized raw material are also heated to a predetermined temperature in order to maintain the gaseous state. [0003] In addition, when a wafer is processed in a processing container, reaction by-products (so-called deposits) are generated and may adhere to the inner wall of the proc...

AI Technical Summary

Problems solved by technology

If the particles scattered into the processing container adhere to the wafer, it may cause a defect of the wafer.

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