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Solar cell

A solar cell, p-type technology, applied in the field of solar cells, can solve the problems of reducing passivation efficiency, reducing carrier life, affecting solar cell efficiency, etc.

Pending Publication Date: 2020-08-11
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a solar cell to solve the problem that the PERC resistivity is higher, the lateral transmission resistance is larger, and PERT will form a recombination center with the increase of doping concentration, which reduces the passivation efficiency. , and reduce the lifetime of minority carriers, which affects the efficiency of solar cells

Method used

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Embodiment Construction

[0026] The application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. It should also be noted that, for ease of description, only parts related to the invention are shown in the drawings.

[0027] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0028] Such as Figure 1-Figure 3 As shown, the solar cell provided by the present invention includes a p-type substrate 1, the front of the p-type substrate 1 is provided with an n-type doped layer 4 and a front passivation anti-reflection layer 2 in sequence, and the back of the p-type substrate...

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Abstract

The invention discloses a solar cell. The solar cell comprises a p-type substrate, and is characterized in that a front surface of the p-type substrate is sequentially provided with an n-type doped layer and a front surface passivation antireflection layer, a back surface of the p-type substrate is sequentially provided with a back surface tunneling passivation layer, a p-type doped film layer anda back surface dielectric film layer, a front electrode is formed on the front passivation antireflection layer, the front electrode penetrates through the front passivation antireflection layer andis in contact with the n-type doped layer, and a back aluminum electrode is formed on the back dielectric film layer, penetrates through the back dielectric film layer and is in contact with the p-type doped film layer. The solar cell is advantaged in that along with reduction of the doping solubility of the p-type doped film layer, the minority carrier lifetime of the p-type substrate is not influenced, so the transverse transmission resistance of the back surface is greatly reduced, and the overall performance of the cell is improved.

Description

technical field [0001] The present invention generally relates to the technical field of solar photovoltaic power generation, and specifically relates to a solar cell. Background technique [0002] A solar cell is a device that converts the sun's light energy into electrical energy. Solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to extract the carriers to form usable electrical energy. [0003] Conventional Passivated Emitter and Rear Cell (PERC) and Passivated Emitter and Rear Total-diffused Cell (PERT) are more and more widely used. However, the recombination rate of the contact area of ​​the back electrode is still relatively high, and the problem of high lateral transmission resistance cannot be solved at the same time, which seriously hinders the improvement of the efficiency of solar cells. [0004] At present, the back side of the commercialized PERC structure on the market uses local metal contact to form electrodes. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0352H01L31/068H01L31/18H01L31/20
CPCH01L31/022441H01L31/02167H01L31/035272H01L31/02168H01L31/0682H01L31/1804H01L31/1868H01L31/202H01L31/208Y02E10/547Y02P70/50
Inventor 李华靳玉鹏
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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