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Back contact solar cell

A technology of solar cells and back contact, applied in the field of solar photovoltaic power generation, can solve the problems of high cost and the need to improve battery performance.

Pending Publication Date: 2020-08-28
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a back-contact solar cell, at least to solve the problems that the cost of the existing IBC solar cell is high and the performance of the cell needs to be improved

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Embodiment Construction

[0023] The application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. It should also be noted that, for ease of description, only parts related to the invention are shown in the drawings.

[0024] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0025] Such as figure 1 , figure 2 As shown, the back contact solar cell provided by the present invention includes a substrate, the front of the substrate is provided with a front passivation anti-reflection layer 2, and the back of the substrate is sequentially provided with a back tunneling p...

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Abstract

The invention discloses a back contact solar cell, which comprises a substrate, wherein a front passivation antireflection layer is arranged on the front surface of the substrate, a back tunneling passivation layer, a back doped film layer and a back dielectric film layer are sequentially arranged on the back surface of the substrate, the back doped film layer comprises p type doped film layer regions and n type doped film layer regions, the p type doped film layer regions and the n type doped film layer regions are arranged at intervals in an interdigital manner, the substrate is a p type substrate, the back dielectric film layer is provided with negative electrode grid line patterns for exposing the n type doped film layer regions and positive electrode grid line patterns for exposing the p type doped film layer regions, negative electrode grid lines are formed in the negative electrode grid line patterns, positive electrode grid lines are formed in the positive electrode grid line patterns, a negative electrode connecting electrode is connected with the multiple negative electrode grid lines, a positive electrode connecting electrode is connected with the multiple positive electrode grid lines, and the positive electrode grid lines are aluminum grid lines. According to the invention, the problems that the existing IBC solar cell is high in cost, and cell performance needs tobe improved are solved.

Description

technical field [0001] The present invention generally relates to the technical field of solar photovoltaic power generation, and specifically relates to a back-contact solar cell. Background technique [0002] A back contact solar cell, also called an interdigitated back contact (IBC) solar cell, is a type of back contact solar cell. The biggest feature of IBC solar cells is that both the emitter electrode and the base electrode are on the back of the cell, which reduces shading and improves photoelectric conversion efficiency. The efficiency and cost reduction of solar cells has always been an important topic that needs to be continued. [0003] Passivation contact structure is an important solution to reduce metal recombination in solar cell solutions, and is used in various cell structures. In the passivation contact structure, the doping concentration of the doped film layer usually affects the electrode contact performance of the battery. The higher the doping solubi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0288H01L31/068
CPCH01L31/022458H01L31/0288H01L31/0682Y02E10/547
Inventor 李华靳玉鹏
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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