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Method for growing high-quality gainnas sub-battery at high temperature by MOCVD

A high-temperature growth and sub-battery technology, applied in circuits, electrical components, gaseous chemical plating, etc., can solve the problems of increased difficulty in nitrogen doping and low utilization of nitrogen sources, so as to reduce the difficulty of doping and improve the overall performance, the effect of reducing adverse effects

Active Publication Date: 2017-08-11
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] GaInNAs sub-cells of GaAs laminated batteries are suitable for lower growth temperature, but the surface defects and impurities of sub-cells grown by MOCVD technology in low temperature environment are relatively serious; the surface of GaInNAs sub-cells can be improved by increasing the temperature, but with the increase of ambient temperature, GaInNAs sub-battery nitrogen doping will become more difficult, and the utilization rate of nitrogen source is extremely low

Method used

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  • Method for growing high-quality gainnas sub-battery at high temperature by MOCVD
  • Method for growing high-quality gainnas sub-battery at high temperature by MOCVD
  • Method for growing high-quality gainnas sub-battery at high temperature by MOCVD

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Embodiment 1

[0020] The raw materials are prepared as follows:

[0021] Ga source: trimethylgallium (TMGa), saturated vapor pressure 113.64Torr;

[0022] In source: Trimethylindium (TMIn), saturated vapor pressure 2.58Torr;

[0023] C source: carbon tetrabromide (CBr4), saturated vapor pressure 0.82Torr;

[0024] Te source: Triethyltellurium (DeTe), saturated vapor pressure 9.33Torr;

[0025] N source: dimethyl trap (DMHy), saturated vapor pressure 165.9Torr;

[0026] Nitrogen (N 2 ) Purity: purity and volume percentage greater than 99.999%;

[0027] Hydrogen (H 2 ) Purity: purity and volume percentage greater than 99.99999%;

[0028] Arsane (AsH 3 ) Purity: purity and volume percentage greater than 99.9999%;

[0029] Silane (Si 2 h 6 ) Purity: purity and volume percentage greater than 99.9999%;

[0030] The above-mentioned different raw materials are put into the MOCVD reaction chamber according to the set procedure, and the high-temperature growth of the GaInNAs sub-cell of th...

Embodiment 2

[0036] 1) Before growing the GaInNAs sub-cell, the carrier gas is hydrogen, and a layer of tunnel junction GaAs / AlGaAs needs to be grown to connect the Ge substrate and the GaInNAs sub-cell. The tunnel junction growth pressure is 30Torr, the thickness is 24nm, and the growth temperature is 540°C , the amount of hydrogen used is 80L / min, and the growth time is 90s.

[0037] 2) When growing GaInNAs sub-cells, the carrier gas is quickly switched to nitrogen, and the usage rate is 2.8L / min. When growing the GaInNAs sub-battery, the growth pressure is 39Torr, the thickness is 0.98um, the growth temperature is 590°C, and the growth time is 30min.

[0038] 3) After growing the GaInNAs sub-cell, the carrier gas is quickly switched to hydrogen, and a layer of tunnel junction GaAs / AlGaAs needs to be grown to connect the two sub-cells. The tunnel growth pressure is 30Torr, the thickness is 24nm, the growth temperature is 540°C, and hydrogen is used. The volume is 80L / min, and the growth...

Embodiment 3

[0040]1) Before growing the GaInNAs sub-cell, the carrier gas is hydrogen, and a layer of tunnel junction GaAs / AlGaAs needs to be grown to connect the Ge substrate and the GaInNAs sub-cell. The tunnel junction growth pressure is 30Torr, the thickness is 26nm, and the growth temperature is 550°C , the amount of hydrogen used is 90L / min, and the growth time is 90s.

[0041] 2) When growing GaInNAs sub-batteries, the carrier gas is hydrogen, and the usage rate is 3L / min. When growing the GaInNAs sub-battery, the growth pressure is 39Torr, the thickness is 1um, the growth temperature is 600°C, and the growth time is 30min.

[0042] 3) After growing the GaInNAs sub-cell, the carrier gas is hydrogen, and a layer of tunnel junction GaAs / AlGaAs needs to be grown to connect the two sub-cells. The tunnel growth pressure is 30Torr, the thickness is 26nm, the growth temperature is 550°C, and the amount of hydrogen used is 90L / min, the growth time is 90s.

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Abstract

The invention discloses a method for high-temperature growth of a high-quality GaInNAs sub battery through MOCVD. When the GaInNAs sub battery of a GaAs laminated battery is grown at a high temperature through the MOCVD, the doping difficulty of a nitrogen element in the high-temperature growth of the GaInNAs sub battery can be lowered through rapid switching of a carrier gas so as to enabling the required high-quality GaInNAs sub battery to be grown; and the rapid switching of the carrier gas is implemented by an interlocking apparatus; in addition, a tunnel junction GaAs / AlGaAs needs to be grown before and after the growth of the GaInNAs sub battery; the carrier gas for enabling the tunnel junction GaAs / AlGaAs to be grown before and after the growth of the GaInNAs sub battery is H2; the carrier gas for enabling the GaInNAs sub battery to be grown is N2; and the doped nitrogen source in the GaInNAs sub battery is dimethylhydrazine. By adoption of the method, the high-quality GaInNAs sub battery can be grown, and the overall performance of the GaAs laminated battery can be improved finally.

Description

technical field [0001] The invention relates to the field of semiconductor equipment design, in particular to a method for high-temperature growth of high-quality GaInNAs sub-cells by MOCVD. Background technique [0002] Energy is an important basic resource for the development of human society. Due to the long distance between the world's energy resource production areas and energy consumption centers, especially with the development of the world economy, the rapid increase of the world population and the continuous improvement of people's living standards, the world's energy demand continues to increase. As a result, competition for energy resources has become increasingly fierce, environmental pollution has increased, and pressure on environmental protection has increased, making energy issues the focus of today's international politics, economy, military affairs, and diplomacy. The development of renewable energy has become a global strategic goal to achieve low-carbon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C16/30C23C16/52
CPCC23C16/301C23C16/52H01L31/1848H01L31/1852Y02P70/50
Inventor 杨鹏杨翠柏张小宾张杨方聪刘向平靳恺王雷高熙隆
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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