Zener diode and method of making the same

A technology of Zener diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced current variation range, soft breakdown phenomenon, etc., and achieve the effect of stable breakdown voltage

Active Publication Date: 2022-07-19
JOULWATT TECH INC LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the prior art, an improvement scheme based on this is to improve by adding an N-implantation region 205 in the Zener diode 200, such as figure 2 As shown, the introduction of the N-implantation region 205 can improve the radian of the curved surface junction to a certain extent, improve the equipotential line curvature of the edge of the N+ region 203, and try to maintain the same breakdown voltage in each region, but at the edge of the N-implantation region 205 The curved surface junction still exists, so the above scheme only weakens the soft breakdown phenomenon, so that the current variation range is reduced, and it cannot be completely avoided

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  • Zener diode and method of making the same
  • Zener diode and method of making the same
  • Zener diode and method of making the same

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Embodiment Construction

[0043] Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are designated by the same or similar reference numerals. For the sake of clarity, various parts in the figures have not been drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be depicted in one figure.

[0044] In describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or region, it can mean directly on the other layer, another region, or directly on the other layer or region Other layers or regions are also included between another layer and another region. And, if the device is turned over, the layer, one region, will be "under" or "under" another layer, another region.

[0045]In order to describe the situation directly above an...

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Abstract

The invention relates to the technical field of semiconductors, and provides a Zener diode and a manufacturing method thereof. The formed Zener diode includes: a well region located on a substrate; a first doped region located on the substrate and a first doped region located on the substrate respectively. The second doped regions on both sides of the doped region; the field oxygen regions respectively located on the side of the second doped region away from the first doped region, and the field oxygen regions are in the bird's beak region on the side close to the second doped region Adjacent to the aforementioned second doped region; and a polysilicon layer located above the field oxygen region, the lateral extension of which covers the aforementioned second doped region; and a third ohmic contact formed with the first doped region and the polysilicon layer respectively An electrode and a second electrode in ohmic contact with the substrate. The present invention adjusts the PN junction formed by the second doping region and the first doping region in common and the well region on the side of the second doping region through the polysilicon layer located above the field oxygen region and extending laterally covering the upper surface of the second doping region Equipotential to stabilize the breakdown voltage of the PN junction everywhere.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a Zener diode and a manufacturing method thereof. Background technique [0002] The diode is an electronic component with a PN junction as the core. When its negative voltage is higher than the positive electrode, it is called reverse bias. The reverse saturation current of the reverse biased diode is very small, but when the reverse bias voltage increases to a certain value, the reverse current is will increase sharply, this phenomenon is called the reverse breakdown of the diode, the reverse breakdown voltage (ie the stable voltage) of the diode is very stable, using this feature, a Zener specially working in the reverse breakdown state can be obtained diode. The core part of the Zener diode consists of P- and N+ regions (or P+ and N- regions), where "-" indicates that the region has a lower doping concentration, and "+" indicates that the region has a higher doping conce...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/866H01L29/06H01L21/329
CPCH01L29/866H01L29/0619H01L29/66106
Inventor韩广涛蒋盛烽
OwnerJOULWATT TECH INC LTD