cu-ni alloy sputtering target

A sputtering target and cu-ni technology, which is applied in the field of Cu-Ni alloy sputtering targets, can solve the problems of easy occurrence of abnormal discharge, inability to form films with uniform film thickness or composition, and inability to perform sputtering film formation stably. , to achieve the effect of coarsening suppression

Active Publication Date: 2021-08-06
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] In the Cu-Ni alloy sputtering target, when the crystal grains are coarsened, there is a concern that irregularities are formed on the sputtering surface during sputtering, and a film with uniform film thickness or composition cannot be formed.
In addition, there is a concern that abnormal discharge is likely to occur, and sputtering film formation cannot be performed stably.

Method used

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Examples

Experimental program
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Effect test

Embodiment

[0093] Hereinafter, the result of the evaluation test which evaluated the said Cu-Ni alloy sputtering target of this invention is demonstrated.

[0094] First, the Cu—Ni alloy sputtering targets of Invention Example 1 to Invention Example 7 and Comparative Examples 1 to 4 were produced by the powder sintering method as follows.

[0095] Oxygen-free copper with a purity of 99.99% by mass was prepared as a Cu raw material and electrolytic Ni with a purity of 99.9% or more was prepared as a Ni raw material, which was put into an alumina crucible and installed in an atomizing device, thereby obtaining an average particle diameter of 50μm Cu-Ni alloy powder. The atomization conditions were set at a melt temperature of 1550° C., a retention time of 8 minutes, a spray pressure of 5 MPa, and a nozzle diameter of 2.0 mm.

[0096] As Ni oxide powder, NiO powder having a purity of 99% by mass or more and an average particle diameter of less than 10 μm was prepared.

[0097] Ni oxide po...

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Abstract

The present invention provides a Cu-Ni alloy sputtering target, which contains Ni, and the remainder is composed of Cu and unavoidable impurities. The Cu-Ni alloy sputtering target is characterized in that it is composed of a solid solution of Cu and Ni Ni oxide phases exist in the grain boundaries of the parent phase, and the area ratio of these Ni oxide phases is set within a range of 0.1% to 5.0%.

Description

technical field [0001] The present invention relates to a Cu—Ni alloy sputtering target used when forming a thin film of a Cu—Ni alloy containing Ni and the remainder consisting of Cu and unavoidable impurities. [0002] This application claims priority based on Patent Application No. 2018-036509 filed in Japan on March 1, 2018 and Patent Application No. 2019-000734 filed in Japan on January 7, 2019, and the contents thereof are incorporated herein. Background technique [0003] For example, as shown in Patent Document 1, the above-mentioned Cu—Ni alloy is excellent in low reflection, heat resistance, and electrical characteristics, and thus can be used as a wiring film for displays and the like. For example, as described in patent documents 2-4, it can also be used as the base film of copper wiring. [0004] Copper-nickel alloys containing 40 to 50% by mass of Ni have a small temperature coefficient of resistance, and therefore, as disclosed in Patent Document 5, for examp...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C14/34C22C1/04C22C1/05C22C9/06C22C19/03B22F1/00B22F9/08
Inventor井尾谦介加藤慎司
OwnerMITSUBISHI MATERIALS CORP