Power module based on modular silicon carbide device

Abstract

The invention discloses a power module based on modular silicon carbide devices, and relates to the technical field of power electronics. The module comprises a machine shell, a high-frequency transformer, a support capacitor, a blocking capacitor, a laminated busbar, a plurality of SiC power devices and a radiator. The radiator is installed in the machine shell. The plurality of SiC power devicesare mounted on the surface of the radiator in the machine shell. The laminated busbar is arranged at the tops of the plurality of SiC power devices and is electrically connected with the plurality ofSiC power devices. The support capacitor is arranged at one side of the radiator in the machine shell and is electrically connected with the plurality of SiC power devices through the laminated busbar. The high-frequency transformer is installed in the machine shell. The blocking capacitor is installed in the machine shell and is connected between the SiC power device and the high-frequency transformer. The power module has the advantages of higher capacity, higher efficiency and smaller size, and is more suitable for being applied to a power grid.

Description

technical field [0001] The present application relates to the technical field of power electronics, in particular to a power module based on a modular silicon carbide device. Background technique [0002] At present, with the increasing application of power electronic conversion equipment in the power grid, its energy efficiency is very important for power electronic converters and plays a decisive role in the energy conversion efficiency of the power grid. The most critical components in the converter are power electronic devices. At present, insulated gate bipolar transistors (IGBTs) using silicon (Si) materials are widely used, and silicon carbide (SiC) is rarely used. Compared with Si power devices, the energy loss of SiC power devices is only 50% of Si power devices, the heat generation is only 50% of Si devices, and has a higher current density. SiC power devices can effectively achieve high efficiency of power electronic systems , miniaturization and light weight, un...

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Problems solved by technology

[0003] At present, only some manufacturers use TO-247 packaged SiC power devices to design power modules, but the power of such devices is small, and the power modules made are not suitable for the use of large-capacity converters in power grids

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