45results about How to "Reduce loop inductance" patented technology

The invention belongs to the technical field of the semiconductor laser driving circuit, and specifically relates to a pulse driving circuit based on a vertical cavity surface emitting laser. The structure circuit comprises a vertical cavity surface emitting laser, energy storage units, a switch unit, a driving chip, a current detection unit, a charge current-limiting unit, and an input-output interface; the components are integrated on one circuit board; a light-emitting surface electrode of the vertical cavity surface emitting laser is connected to a circuit board, the energy storage units are distributed around the vertical cavity surface emitting laser, and the switch unit is located on a back of the circuit board located by the vertical cavity surface emitting laser; the energy storage units, the vertical cavity surface emitting laser, the current detection unit and the switch unit form a discharge loop through circuit board via holes. By utilizing the dual-layer structure of thevertical cavity surface emitting laser and the circuit board multilayer circuit structure, the pulse discharge loop can be integrated in the 180-DEG space around the laser, the structure is simple, the distribution parameter is controllable, and the narrow pulse large current parameter is easy to produce, thereby obtaining the laser narrow pulse with high peak power.

The invention relates to an axial leading-out double-pole-plate coiling pulse formation line, and belongs to the technical field of pulse power. A pulse formation line body is formed by coiling two pole plates and two medium layers in an Archimedes spiral manner, the high-voltage pole plate, inner-side insulating media, the low-voltage pole plate and outer-side insulating media are arranged successively from inside to outside, and the positions of the high-voltage pole plate and the low-voltage pole plate can be interchanged; and the high-voltage pole plate, inner-side insulating media, low-voltage pole plate and outer-side insulating media are coiled for n rounds in the Archimedes spiral manner, the first round of the high-voltage pole plate and the first round of the low-voltage pole plate are led out in the axial two sides via a high-voltage leading-out foil and a low-voltage leading-out foil respectively, and the pulse formation line composed of an axial leading-out structure and n-a rounds of complete band-shaped wires is formed. The coiling pulse formation line is high in quality of output waveforms, and is simpler in structure compared with a three-pole-plate coiling band-shaped line.

The invention relates to a brake chopper composite busbar. With the brake chopper composite busbar adopted, problems such as large stray inductance of a main loop, poor circuit reliability, inconvenient installation, bloated structure, large occupied space and high design cost in the prior art can be solved. The brake chopper composite busbar of the invention includes an L-shaped flat O busbar, an L-shaped flat N busbar and an L-shaped flat P busbar which are stacked together; high-insulation strength materials are arranged between adjacent busbars; the O busbar is provided with an O connecting portion and O wiring terminals; the N busbar is provided with an N connecting portion and N wiring terminals; and the P busbar is provided with a P connecting portion and P wiring terminals. According to the brake chopper composite busbar of the invention, the stacked composite busbars are adopted to replace cables, copper bars or hot-compress busbars to perform electrical connection, and therefore, the complexity of previous wring can be lowered, and layout can be simple, and quality is more reliable; the size and weight of a system can be reduced, and repair and maintenance of a main circuit can be facilitated; and loop inductance can be reduced, and an IGBT can work safely and reliably, and the reliability of products can be greatly enhanced.

The invention relates to the inversion power module and particularly relates to a three-phase inversion power module based on a two-way spiral flow channel water cooling heat radiation substrate. The three-phase inversion power module based on the two-way spiral flow channel water cooling heat radiation substrate solves problems that a present heat radiation flow channel is not reasonable, poor in heat radiation, big in size and weight and not easy to perform fast plug-pull installation. In the scheme of the three-phase inversion power module based on the two-way spiral flow channel water cooling heat radiation substrate, a three-phase inversion power circuit is arranged on the two-way spiral flow channel water cooling heat radiation substrate; a T-shaped composite mother board and a drive board are stacked on the two-way spiral flow channel water cooling heat radiation substrate; a support seat is arranged in the front edge of the two-way spiral flow channel water cooling heat radiation substrate; water connectors and fixed blocks are arranged on two sides of the two-way spiral flow channel water cooling heat radiation substrate; and screw rods and a handle go through the fixed blocks. The advantages of the three-phase inversion power module based on the two-way spiral flow channel water cooling heat radiation substrate has advantages that flow resistance of a cooling liquid is small and heat radiation is uniform; the water connectors are easy to mount and dismount without affecting processing accuracy; and the layout is not affected by the flow channel; circuit electric inductance is small and working reliability of a thermal performance power module is high. Furthermore, the three-phase inversion power module based on the two-way spiral flow channel water cooling heat radiation substrate is compact in layout, small in volume and light in weight, saves cost; the interfaces are preposed in sequence, which is easy to maintain and saves external fast connection device; and a driving signal is high in anti-interference.

Disclosed is a package board wherein a malfunction or error occurs even when a high-frequency IC chip, in particular an IC chip of more than 3 GHz is mounted. A conductor layer (34P) having a thickness of 30 mum is formed on a core substrate (30), and a conductor circuit (58) having a thickness of 15 mum is formed on a interlayer resin insulating layer (50). By forming the conductor layer (34P) thick, the volume of the conductor itself is increased, thereby reducing the resistance. In addition, the power supply capacity to the IC chip can be improved by using the conductor layer (34) as a power supply layer.

The invention relates to a probe card. A conductive layer is arranged on an insulating base body of a probe seat of the probe card; and the conductive layer is electrically connected to a grounding circuit on the probe card through a conductive pin penetrating through the insulating base body, wherein the first end of a probe on the probe card is electrically connected to a test circuit of a circuit board; part of an intermediate section is fixed in the insulating base body in a penetrating way; the second end of the probe passes out of the insulating base body to expose outside; the periphery of the intermediate section of the probe is wound by a lead wire; the first end of the lead wire is electrically connected with the grounding circuit of the circuit board; and the second end is electrically connected with the conductive layer. Therefore, a section of grounding range of the conductive layer is added because of the wound lead wire of the probe, so that the inductance of a probe loop in the insulating base body can be reduced and the accuracy of test data of the probe is improved.

Positive and negative power terminals protrude from a power terminal arrangement surface not facing a capacitor element. Positive and negative electrode bus bars gather with each other after at least one of them extends along a non-electrode surface of the capacitor element, and then run side by side in a bus bar parallel running section. The positive electrode bus bar runs in parallel with the negative electrode bus bar in the bus bar parallel running section, and then extends along the positive power terminal from the proximal end of the positive power terminal to the distal end thereof. The negative electrode bus bar runs in parallel with the positive electrode bus bar in the bus bar parallel running section, and then extends along the negative power terminal from the proximal end of the negative power terminal to the distal end thereof.

The invention discloses a substrate wiring terminal structure of a low-inductance power module. The structure comprises a first connecting terminal, a second connecting terminal and at least one double-layer power module substrate, part areas of the first connecting terminal and the second connecting terminal are arranged in a vertically spaced and overlapped manner, and a wiring end part is formed at the front end part. The tail end parts of the first connecting terminal and the second connecting terminal are sequentially provided with an extension part and a connecting part; the double-layerpower module substrate comprises a first substrate connecting area and a second substrate connecting area, the connecting part of the first connecting terminal and the first substrate connecting areaare connected into a whole, and the connecting part of the second connecting terminal and the second substrate connecting area are connected into a whole. The structure reduces the inductance of a system loop, effectively reduces the voltage peak at the moment when the IGBT module is turned off, reduces the switching loss, avoids electromagnetic interference, and guarantees the performance of a three-phase inversion driving system.

The invention discloses a power module based on modular silicon carbide devices, and relates to the technical field of power electronics. The module comprises a machine shell, a high-frequency transformer, a support capacitor, a blocking capacitor, a laminated busbar, a plurality of SiC power devices and a radiator. The radiator is installed in the machine shell. The plurality of SiC power devicesare mounted on the surface of the radiator in the machine shell. The laminated busbar is arranged at the tops of the plurality of SiC power devices and is electrically connected with the plurality ofSiC power devices. The support capacitor is arranged at one side of the radiator in the machine shell and is electrically connected with the plurality of SiC power devices through the laminated busbar. The high-frequency transformer is installed in the machine shell. The blocking capacitor is installed in the machine shell and is connected between the SiC power device and the high-frequency transformer. The power module has the advantages of higher capacity, higher efficiency and smaller size, and is more suitable for being applied to a power grid.